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研究生：	張品全 Chang, Ping-Chuan
論文名稱：	三族氮化物系列光電元件之研究 The Study of Ⅲ-Nitride Based Optical Devices
指導教授：	張守進 Chang, Shoou-Jinn 蘇炎坤 Su, Yan-Kuin
學位類別：	博士 Doctor
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2005
畢業學年度：	93
語文別：	英文
論文頁數：	124
中文關鍵詞：	發光二極體、氮化鎵、光檢測器、有機金屬氣相磊晶
外文關鍵詞：	LED, GaN, MOCVD, PD
相關次數：	點閱：88 下載：2
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　　在本論文中，我們首先以光激化學沈積系統在氧的情況下，將鎳/金(3nm/6nm)金屬薄膜回火，發現在波長520nm時，金屬薄膜穿透率由65%改善為85%。進ㄧ步地，我們將此不同回火條件的金屬薄膜應用到未摻雜的氮化鎵及氮化鋁鎵/氮化鎵異質結構上，以製作金屬-半導體-金屬結構之光檢測器。我們可以發現經由光激化學沈積系統在氧的環境下回火後，金半金光檢測器的光及電特性都有極大的改善，包括有效蕭基位障高度與光電流及暗電流比。此外，以相同回火條件比較未摻雜的氮化鎵及氮化鋁鎵/氮化鎵異質結構光檢測器，可以發現量子效率分別可以達到13%及57%。因此可以知道利用氮化鋁鎵/氮化鎵異質結構來替代傳統的未摻雜氮化鎵製作光檢測器可以獲得較高的響應、較低的雜訊及較高的檢測率。

　　我們使用濺鍍成長的二氧化矽層作為絕緣層及鈍化層以製作金-氧-半異質結構光檢測器。從實驗結果可知在5伏特偏壓下，具有鈍化層的金氧半光檢測器之光電流與暗電流比可高達1.27×104，此外，其紫外光對可見光的拒斥比可高達1000倍以上。

　　我們使用氮化銦鎵/氮化鎵多重量子井結構來製作金-半-金光檢測器。我們發現此金半金結構的檢測器光電流與暗電流比值較小，因此我們利用光激化學沈積系統成長一層二氧化矽層以製作金屬-絕緣層-半導體光檢測器。由實驗結果可知藉著加入ㄧ層二氧化矽層可以降低暗電流，且在5.3nm厚度的二氧化矽層下，光電流與暗電流比值可高達1.53×103。

　　最後我們製作以一p型氮化銦鎵披覆層作為p型接觸的氮化銦鎵/氮化鎵多重量子井之藍光發光二極體。相較於p型氮化鎵，p型氮化銦鎵可以獲得較高的電洞濃度，因此可將發光二極體的20mA操作電壓從原本的3.78伏特降至3.37伏特，並改善藍光發光二極體的輸出功率及壽命。

　In this thesis, the Ni/Au (3nm/6nm) thin film is annealed by photo-CVD in oxygen. We find the transmittance spectra of the Ni/Au thin film improve from 65% to 85% at 520nm. Further, we applied the Ni/Au thin film under various annealing conditions in the u-GaN sample and AlGaN/GaN heterostructure sample to fabricate Metal-Semiconductor-Metal Ultraviolet Photodetectors. From the experiment results, we knew that the electrical and optical characteristics of the MSM photodetectors have been improved greatly after annealing by photo-CVD in oxygen. Besides, compared with u-GaN sample under the same annealing condition, the AlGaN/GaN heterostructure photodetectors have the larger quantum efficiency (57%). Therefore, we knew that the AlGaN/GaN heterostructure photodetectors have the higher responsivities, the lower noise and higher detectivity.

　GaN-based metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure ultraviolet (UV) photodetectors with sputtering SiO2 insulation and passivation layers were fabricated. It was found that with a 5 V applied bias, photocurrent to dark current contrast ratio was 2.1104 for the MIS photodetector with passivation. It was also found that UV-to-visible rejection ratio of such MIS photodetector with passivation was more than 3 orders of magnitude while the responsivity was 0.144 A/W with a 5 V applied bias and a 350 nm incident light wavelength. Such a result was much larger than those observed from the MSM photodetector and the MIS photodetector without passivation.

　We use InGaN/GaN MQW photodetectors as the active layer to fabrication the planar GaN-based MQW photodetectors. We found that the leakage current of the MSM MQW photodetectors is too high so we grow a SiO2 layer on the sample by photo-CVD. It was found that we can significantly reduce the dark current of this photodiodes by inserting a thin SiO2 interlayer in between metal electrode and the underneath InGaN/GaN MQW. With a 53nm-thick SiO2 interlayer, it was also found that we could achieve a high 1.53x103 photo current to dark current contrast.

　At last, we fabricate the InGaN/GaN MQW LED with a p-type InGaN as the p-contact. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 V to 3.37 V by introducing a 5nm-thick In0.23Ga0.77N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.

CHAPTER 1 Introduction------------------------------------------------------- 1
1 Crystal Structure of Group III Nitrides-----------------------------------2
2 Key issues for III-nitride materials--------------------------------------3
3 The MOCVD growth methods of III-Nitrides----------------------------------6
4 The background of III-Nitrides Optical Devices----------------------------8
4.1 Light Emitting Diodes
4.2 Photodetectors (PDs)
5 The introduction of photodetectors---------------------------------------10
5.1 Photoconductor
5.2 Photodetector
5.3 Avalanche photodiode
6 Overview of this dissertation--------------------------------------------14
CHAPTER 2 Theory, Fabrication and Measurement System-------------------------26
1 The theory of metal-semiconductor junction-------------------------------26
2 The theory of metal-semiconductor-metal photodetectors-------------------29
2.1 The introduction of metal-semiconductor photodetectors
2.2 The principle of metal-semiconductor-metal photodetectors
3 Fabrication system and measurement theory--------------------------------31
3.1.1 Photo-CVD system
3.1.2 Growth mechanism of SiO2
3.2 RF Sputtering System
3.3 The measurement systems
4 Fabrication of GaN-based MSM Photodetectors------------------------------36
4.1 Mesa isolation
4.2 MSM schottky contact
4.3 Contact pad
CHAPTER 3 The Fabrication and Caracterization of the Ni/Au Semitransparent Contact and MSM AlGaN/GaN Photodetectors-------------------------------------53
1 The fabrication of the MSM photodetectors with semitransparent Ni/Au contacts---------------------------------------------------------------------55
2 The electrical and optical characteristics of the MSM photodetectors with semitransparent Ni/Au contacts-----------------------------------------------56
3 Summary------------------------------------------------------------------62
CHAPTER 4  The Fabrication and Characteristic of the MIS AlGaN/GaN Photodetectors---------------------------------------------------------------74
1 The fabrication of the MIS photodetectors--------------------------------74
2 The electrical and optical characteristics of the MIS photodetectors-----76
3  Summary-----------------------------------------------------------------79
CHAPTER 5  GaN-based MQW Optical Devices-------------------------------------87
1 The planar GaN-based MQW Photodetectors----------------------------------87
1.1 The fabrication of the MIS MQW photodetectors
1.2 The electrical and optical characteristics of the MIS MQW photodetectors
1.3 Summary
2  The GaN-based MQW LEDs--------------------------------------------------91
2.1 The fabrication of the MQW LEDs
2.2 The electrical and optical characteristics of the MQW LEDs
2.3 Summary
CHAPTER 6  Conclusions and Future Work--------------------------------------108
1  Conclusions------------------------------------------------------------108
2  Future Work------------------------------------------------------------109
References------------------------------------------------------------------110
Publish List----------------------------------------------------------------121
Vita------------------------------------------------------------------------124

                                    

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