鋁合金具有重量輕，強度高，具延展性，易於加工成型等優點。雖然鋁合金易在空氣中與氧氣形成氧化膜可以提高耐腐蝕性，但還不足以滿足工界業的需求。在本論文中，我們使用6061鋁合金製作陽極氧化薄膜（AAO）與微弧氧化薄膜（MAO），以提高耐腐蝕性。
在陽極氧化薄膜的研究上，我們分成三個部分。在第一部份，在較寬廣的參數範圍內外加電流密度0.3–3A / dm2以及硫酸濃度1–5 M中探討影響。在較高的電流密度將導致較高的氧化膜成長速率，雖然可增加多孔層的厚度但是保護性較差。增加硫酸濃度將可提升反應速率，尤其當硫酸濃度提升到3–5 M的時候，將導致氧化膜產生裂痕導致耐蝕性降低。在第二部分，使用田口式品質方法研究電解液濃度，電流密度和陽極氧化時間等參數對AA6061鋁合金耐蝕性的影響。使用L9直交表每個實驗參數有三個層級，在陽極氧化過程紀錄電壓的變化、使用能量色散光譜儀來分析AAO膜組成成份的變化，使用掃描電子顯微鏡來觀察AAO膜的表面與橫截面的形貌，最後利用恆電位極化法判斷AAO膜的相對耐腐蝕性。在第三部分，探討AAO膜裂痕的形成以及耐蝕性行為的影響。在高的硫酸濃度(5 M)與低的電流密度(0.3 A/dm2)時，陽極氧化薄膜表面發現許多裂痕形成，當在較高的硫酸濃度時增加電流密度將抑制陽極氧化薄膜裂痕的形成；當電流密度固定在1 A/dm2時降低硫酸濃度亦有助於消除裂痕。當裂痕數量越多時，腐蝕電流密度則越高代表耐蝕性越差，抑制裂痕的形成將導致腐蝕電流變小代表有助於耐蝕性能提升。在陽極氧化薄膜的最佳耐蝕性是腐蝕電流密度為Icorr=8.516×10-11 A/cm2，當硫酸濃度為1 M，電流密度為1 A/dm2，反應時間為20分鐘。
在微弧氧化薄膜的研究上，我們分成三個部分。在第一部份，當電解液濃度為1 g/L 氫氧化鈉 + 4 g/L 矽酸鈉時且反應時間60分鐘時，觀察外加電流密度1–3A / dm2時探討其影響。隨著電流密度增加而微弧氧化薄膜厚度隨著線性增加。當電流密度增加到2–3A / dm2時，因微弧氧化持續產生激烈反應導致熱應力累積增加以致於微弧氧化薄膜表面出現裂痕導致耐蝕性降低。在第二部份，當電流密度固定在1A / dm2時且反應時間60分鐘時，觀察電解液濃度1 g/L氫氧化鈉+ 4, 8, 12 g/L 矽酸鈉時探討其影響。當電解液濃度固定在1 g/L氫氧化鈉時，隨著矽酸鈉濃度（4–12 g/L）增加產生電弧電壓降低（380–320 V）。當電解液濃度固定1 g/L氫氧化鈉下，矽酸鈉濃度由4到8 g/L時，微弧氧化薄膜厚度差異不大，當矽酸鈉濃度增加到12 g/L時，微弧氧化薄膜厚度大幅增加。在第三部份，當電流密度固定在1A / dm2時，電解液濃度為1 g/L 氫氧化鈉 + 4 g/L 矽酸鈉時，觀察反應時間30–90分鐘時探討其影響。隨著反應時間增加而微弧氧化薄膜厚度隨著線性增加。當反應時間增加到90分鐘時，因微弧氧化持續產生激烈反應導致熱應力累積增加以致於微弧氧化薄膜表面出現裂痕。在微弧氧化薄膜的最佳耐蝕性是腐蝕電流密度為Icorr=2.945×10-10 A/cm2，當電流密度為1 A/dm2，電解液濃度為1 g/L 氫氧化鈉 + 4 g/L矽酸鈉溶液，反應時間為60分鐘。

Aluminum alloys have favorable properties such as light weight, high strength, high ductility and good machinability. Although the oxide film formed on aluminum alloys, due to the oxygen in the air enhances the corrosion resistance, it is not enough to meet the needs in industry. In this dissertation, we investigated anodic aluminum oxide (AAO) and micro–arc oxide (MAO) films on 6061 aluminum alloy (AA6061) to improve the corrosion resistance.
Our study of AAO films can be divided into three sections. In the first section, the effects of an applied current density (0.3–3 A/dm2) and sulfuric acid concentration (1–5 M) over a wide range on the AA6061 alloy are discussed. Applying high current density resulted in a higher growth rate of the oxide; however, this also made the oxide layer more porous and less protective. Increasing the sulfuric acid concentration also enhanced the reaction rate. The vigorous reaction that took place in the electrolyte with the high sulfuric acid concentrations of 3–5 M led to the deposits cracking, which deteriorated the corrosion resistance. In the second section, the effects of electrolyte concentration, current density, and anodization-time parameters on the evolution of the corrosion resistance for the AA6061 alloy were investigated using the Taguchi method. Each anodization parameter had three levels using an experimental set of L9 orthogonal arrays. Variations in the bias voltage were recorded during the AAO process, and an energy-dispersive spectrometer was used to analyze the variations in the composition of the oxidized films. Variations in surface morphology and cross-section of the AAO were examined using a scanning electron microscope. Finally, the potentiostatic polarization method was used to characterize the relative corrosion resistance of the oxidized films. In the third section, the crack formation and corrosion behavior of the AA6061 oxide films were investigated. A number of cracks formed on the surface of the anodized AA6061 oxide film at the high electrolyte concentration of 5 M and low current density of 0.3 A/dm2. Moreover, increasing the current density suppressed crack formation at the high concentration of 5 M; alternatively, decreasing the electrolyte concentration was also helpful for eliminating cracks at a constant current density of 1 A/dm2. Moreover, the more the cracks, the higher the corrosion current was. Suppressing crack formation was crucial for promoting the corrosion resistance of the AA6061 film with less corrosion current. The best corrosion resistance of the anodized films, with Icorr = 8.516 × 10–11 A/cm2, was attained with 1 M sulfuric acid, a current density of 1 A/dm2, and an anodization time of 20 min.
Our study of MAO films can be divided into three sections. In the first section, the specimens were oxidized at the various direct current densities of 1–3 A/dm2 in a 1 g/L NaOH and 4 g/L Na2SiO3 electrolyte solution for a reaction time of 60 min to characterize the micro–arc oxidation behavior. The thickness of the oxidized films was roughly linearly proportional to the applied current density. The vigorous reaction that occurred at the higher current densities of 2–3 A/dm2 led to more thermal stress in the deposits, which then cracked thereby deteriorating the corrosion resistance. In the second section, the current density and reaction time were fixed at 1 A/dm2 and 60 min. The electrolyte comprised 1 g/L of sodium hydroxide with the different concentrations of 4, 8 and 12 g/L sodium silicate solution added. With the NaOH solution at the concentration of 1 g/L, the increases in sodium silicate (4–12 g/L) concentration led to the initial arc voltage decreasing (380–320 V). With the sodium hydroxide solution at the concentration of 1g/L, the thickness of the MAO films was not significantly changed when the sodium silicate concentration was varied between 4–8 g/L. But, when the sodium silicate concentration was enhanced to 12 g/L, the MAO films grew thicker. In the third section, the specimens were oxidized at the various reaction times of 30–90 min in a concentration of 1 g/L sodium hydroxide and 4 g/L sodium silicate electrolytes solution at a fixed current density of 1 A/dm2 to characterize the micro–arc oxidation behavior. The thickness of the oxidized films was roughly linearly proportional to the applied reaction time. The reaction time of 90 min led to the accumulation of more thermal stress in the deposits, which then cracked thereby deteriorating the corrosion resistance. The best corrosion resistance of the MAO film with Icorr=2.945×10–10 A/cm2 was attained at a current density of 1 A/dm2, under a concentration of 1 g/L NaOH and 4 g/L Na2SiO3 electrolyte solution, and with a reaction time of 60 min.

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