在此研究中，我們合成出具有單一黃銅礦晶相結構的CuInxGa1-xSe2奈米粒子，x介於0.6-0.9之間。CuInxGa1-xSe2奈米粉體使用氯化亞銅(CuCl)、氯化銦(InCl3)、氯化鎵(GaCl3)及硒元素(Se)藥品製備。合成出的奈米粒子其晶粒大小約介於70-125nm之間。
在合成CIGS奈米粒子中，我們可以藉由調整氯化銦與氯化鎵的量改變銦與鎵的比例。並更進一步的製備出約1微米厚的膜面。
我們也以化學水浴沉積法製備出應用於CIGS太陽能電池之緩衝層硫化鎘(CdS)與硫化鋅(ZnS)薄膜。由掃描式電子顯微鏡(SEM)可以得到CdS和ZnS薄膜皆有均勻覆蓋性，未來可以應用在CIGS太陽能電池之緩衝層。

In this study, we report the synthesis in solution of phase pure nanocrystals of chalcopyrite CuInxGa1-xSe2 with x ranged from 0.6-0.9. CuInxGa1-xSe2 nanocrystals were synthesized from copper chlorides, indium chlorides, gallium chlorides and selenium. The nanocrystals ranging from 70 to 125 nm in diameter were synthesized in solution.
The In/Ga ratio in the CIGS nanocrystals could be controlled by varying the In/Ga reactant ratio in the reaction. Using methods developed to produce micrometer-thick films.
The buffer layers of cadmium sulfide (CdS) and zinc sulfide (ZnS) thin films were deposited by chemical-bath-deposition (CBD) process for CIGS solar cells. From SEM results, the conformal coverage of CdS and ZnS films on the substrates were achieved. With the desired properties, these thin films shall be employed for the buffer layers of CIGS solar cells.

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