| 研究生: |
鍾秉憲 Chung, Bing-Xian |
|---|---|
| 論文名稱: |
鈷奈米粒子之選擇性物理沈積探討 Study of selective cobalt nanoparticles synthesis deposition by physical deposition |
| 指導教授: |
劉全璞
Liu, Chuan-Pu |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年: | 2003 |
| 畢業學年度: | 91 |
| 語文別: | 中文 |
| 論文頁數: | 131 |
| 中文關鍵詞: | 單磁區 、磁性質 、均勻分散 、尺寸均一性 、奈米粒子 、鈷 |
| 外文關鍵詞: | cobalt, nanoparticles, size uniformity, distribution well, magnetism, single domain |
| 相關次數: | 點閱:104 下載:2 |
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本實驗利用直流磁控濺鍍,於室溫下,成功地製作出具分散性的鈷奈米粒子於二氧化矽/矽(001)基板上。製程改變的參數為基板偏壓(+525至-100 Volts),濺鍍靶材到基板間之距離(6~11 cm),以及沈積時間(10~30 sec),其餘的參數皆保持不變,包含濺鍍功率為50瓦等。使用原子力顯微鏡及掃描式電子顯微鏡,以分析鈷奈米粒子之表面型態及尺寸;利用穿透式電子顯微鏡來分析鈷奈米粒子的微結構。研究發現,外加基板正偏壓,可獲得數個奈米到數十奈米級尺度的鈷奈米粒子;此較大的多晶鈷奈米粒子,乃由較小的單晶鈷聚集而成,且同時具有面心立方和六方最密堆積等兩相共存。為使奈米粒子之尺寸減小並分佈更均勻,可供給較大的正偏壓予基板,而獲得電荷累積之效應,此時奈米粒子的成長動力學,可由VW成長模式變化成類似SK成長模式。
Dispersive cobalt nanoparticles are fabricated directly on SiO2/Si(001) substrates by DC magnetron sputtering at room temperature. During deposition, the parameters chosen for the investigation are substrate bias (from +525 To –100 Volts), target-to-substrate distance (from 6 to 12 cm) and deposition time (from 10 to 30m sec), while the other parameters are kept the same, including the power of 50 watts. Atomic force microscope (AFM) is employed to determine the density and morphology of cobalt nanoparticles whereas high-resolution electron microscope (HRTEM) is used to visualize the resulting microstructure in the nanoparticles. It is found that Co nanoclusters array ranging from a few nanometers to some tens of nanometers can be fabricated by applying positive substrate bias. The larger polycrystalline cobalt nanaoclusters are formed by the coalescence from the smaller single-crystalline ones, where fcc and hcp phases coexist. The size reduction and uniformity of the nanoclusters array can be further enhanced by applying larger positive biases due to electron charging effects. Under charging effects, the growth kinetics can be altered from the VW to SK-like growth mode.
[1] Thin Film Deposition. (Principles & Practice)
Donald L. Smith, 1995.
[2] 改變世界的奈米技術
[3] Nucleation and Growth of Thin Films
B. Lewis & J. C. Anderson, New York San Francisco
[4] 碳化鈦及氮化鈦薄膜在Si(100)基板之磊晶成長
許華偉,國立清華大學材料科學與工程學系,博士論文(1998).
[5] 氮化鈦薄膜濺鍍之研究
王起明,國立清華大學材料科學與工程學系,碩士論文(1996)
[6] An Introduction to Gas Discharge
A. M. Howwastson, Pergamon Press, Chapter. 4, 84 (1976)
[7] Glow Discharge Processes
B. Chapman, John Willwy & Son, Inc. N. Y., Chapter. 6, 178 (1980).
[8] 濺鍍鉭基薄膜的相轉變機制與在銅金屬化處理之擴散阻障層性質研究
陳松德,逢甲大學材料科學研究所,碩士論文(1999).
[9] 磁性金屬氧化物奈米粒子之合成與鑑定
魏明芬,國立中正大學化學研究所,碩士論文(2002)
[10] 微量銅添加對燒結(Nd, Dy) FeB磁石磁性影響及矯頑機制之研究
張晃暐,國立中正大學物理研究所,碩士論文(2000)
[11] Soft and Hard Magnetic Materials with Applications
J. D. Livingston, (1986)72
[12] G. Hilsccheer, R. Grossinger, S. Heisz, H. Sassik and G. Weisinger,
J. Magn. Magn. Mater.,84,(1990),577.
[13] Interrelationship between Structure and Property on Magnetic Materials
R.Ramesh and G. Thomas, Mater. Sci. Eng., B3, (1989)
[14] 稀土永磁材料及其應用
周壽增,(1989), 141
[15] R.Ramesh and K. Srikrishna, J. Appl. Phys., 64(11), (1988)
[16] 直流磁控濺鍍鋯及氮化鋯薄膜性質、結構與擴散阻障層應用之研究
楊恆傑,國立成功大學材料科學及工程學系,碩士論文(2002)
[17] M. L. Wu, W. D. Qian, Y. W. Chung, Y. Y. Wang, M. S.Wong, William D. Sproul,
Thin Solid Films, Vol.308, 113 (1997).
[19] Introduction to Magnetic Materials, B. D. Cullity
[20] R. Birringer, and H. Gleiter, in Clusters of Atoms and Molecules II, ed. H.
Haberland, Springer Verlag, Berlin (1994).
[21] M. Takeyama, A. Noya, & K. Sakanishi, J. Vac. Sci. Technol., B18, No.3,
1333 (2000).
[22] H. Yanagisawa, K. Sasaki, Y. Abe, M. Kawamura, & S. Shinkai, Jpn. J. Appl.
Phys., Vol.37, 5715 (1998).
[23] C. L. Chien, S. H. Liou and Gang Xiao, J. Magn. Magn. Mater. 54-57, p.759,
1986.
[24] Gang Xiao, and C. L. Chien, Appl.. Phys. Lett. 51 (16), p.1280, 1987.
[25] C. L. Chien et al., J. Appl. Phys. 61(8), p.3311, 1987.
[26] S. H. Liou and C. L. Chien ,j. Appl. Phys. 63(8), p.3311, 1987
[27] Y. Kanai and S. H.Charap, J. Appl. Phys. 69 (8) p.44781991
[28] Kaitsu et al. IEEE Trans. Magn., MAG-32, no.5,p.3813, 1996
[29] I. Kaitsu et al ., IEEE Trans. Magn. MAG-34, p.1591, 1998.
[30] K. Ichihara et al., IEEE Trans. Magn. MAg-34, p.1603, 1998.
[31] S. Stavroyiannis et al., Appl Phys. Lett. 73 (23), p.3453, 1998.
[32] J. N. Zhou et al.., J. Appl. Phys. 84 (10), p.5693, 1998.
[33] J. N. Zhou et al., J. Appl. Phys. 85(8), p.6151, 1999.
[34] Chen Chen , IEEE Trans. Magn. MAG-35, p.3466, 1999.
[35] C. M. Kuo and P. C. Kuo, J. Appl. Phys. 87 (1), p.1, 1999.
[36] J. A. Christodoulides, J. Appl. Phys. 87(9), p.6938, 2000.
[37] M. Yu. J. Appl. Phys. 87 (9), p.6959, 2000.
[38] A. Kikiysu, J. Appl. Phys. 87 (9), p. 6944, 2000.
[39] Chen Chen, J. Appl. Phys. 87 (9), p. 6947, 2000.
[40] Yingfan Xu. J. Appl. Phys. 87 (9), p.6971, 2000.
[41] J. N. Zhou, J. Du, J, Appl. Phys. 87 (9), p. 5624, 2000.
[42] C. P. Luo, J. Du, J. Appl. Phys. 87 (9), p. 6941,2000.
[43] H. Kronmuller, “The Nuceation Fields of Uniaxial Ferromagnetic Crystals”
Phys. Stat. Sol. (b) 130, (1985), 136.
[44] 高性能燒結(Nd, Dy)(Fe,Co,Cu)B磁石研製,及矯頑機制之研究
邱軍浩,國立中正大學物理研究所,碩士論文(2002)
[45] 實用磁性材料,鄭振東
[46] F. Liu, Phys. Rev. Lett. 89, 246105 (2002).
[47] An Introduction to Gas Discharge
A. M. Howwastson, Pergamon Press, Chapter. 4 84 (1976)