本論文中，我們利用離子束濺射源系統先預濺鍍一層鎢薄膜在1公分*1公分的C軸藍寶石基板上，再將其硫化以合成二硫化鎢薄膜。以此方法可以合成出大面積且均勻的二硫化鎢薄膜，並可以進一步透過預濺鍍時間來控制二硫化鎢的層數。將薄膜進行光學量測，可以發現吸光範圍在可見光範圍內，且在厚度較薄的情況下近乎透明。此外，調整硫化環境可以變化薄膜的層狀堆疊情形，得到沿著(001)單一晶向堆疊的二硫化鎢薄膜。本論文亦報導了二硫化鎢薄膜的膜面型態，發現在較薄的膜面上會出現數奈米高的小丘，當薄膜厚度增長到一定程度後，膜面會漸趨平整。同時，我們也發現了：使用氧化鎢作為預鍍膜所合成出的二硫化鎢薄膜，其膜面會有凝聚的情形發生。

In the study, we have demonstrated that the wafer-scale tungsten disulfide (WS2) film can be obtained on 1cm*1cm c-plane sapphire substrates by sulfurization of pre-deposited tungsten, which was sputtered by Ion Beam Sputtering (IBS) system. In this method, the film we synthesized was flat and the layer numbers of WS2 film could be controlled by pre-deposited time of tungsten film. On the optical properties of WS2, the absorption range was confirmed in the visible light spectrum, and it was almost transparent in the case of several layers. In addition, the grown WS2 film could be aligned along the (002)-plane by adjusting the synthesis conditions. The surface morphology of WS2 film with different pre-sputtering time was observed, and we found that there were mounds arrayed periodically in few pre-deposited time. Moreover, when the thickness of WS2 film was thick enough, the surface gradually flattened. Additionally, WS2 film which replaces tungsten with tungsten oxide as pre-deposited film would cause the film condensation.

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