近年來，地球能源與資源大量地消耗，導致油電成本增加。因此，再生能源與節能科技的迅速發展是必要的。於再生能源中又以太陽能發電的太陽能電池光電元件受到特別的重視。於節能科技中又以固態照明的發光二極體光電元件受到特別的重視。因它們兼具環保、安全、壽命長及安裝容易及裝設環境受限較小的優勢。太陽能電池是以改進轉換效率為目標，而發光二極體則是以光萃取效率為依據。這兩者效率的改進皆與光電元件的表面處理有關。
因此，本論文將藉由表面處理技術針對光電元件上的磷化鎵、粗糙化矽、玻璃及氮化鎵材質的表面進行表面處理。分別在磷化鎵材質上製備粗糙化氧化鋅掺鋁薄膜、在粗糙化矽材質上製備氧化矽-氮氧化矽-氮化矽的結構、在玻璃材質上製備多孔氧化矽-氟化鎂的結構及在氮化鎵材質上製備選擇性高障礙區。於粗糙化矽材質上製備氧化矽-氮氧化矽-氮化矽的結構，這三層結構在300 nm至1100 nm波長的平均反射率被減少至2.01%。這三層結構應用於粗糙結晶矽太陽能電池上短路電流密度改善了7.78%及轉換效率改善了10.95%。於玻璃材質上製備多孔氧化矽-氟化鎂的結構，這二層結構在400 nm至1200 nm波長的平均反射率被減少至0.5%。這二層結構應用於矽疊層太陽能電池上短路電流密度改善了6.82％及轉換效率改善了7.14%。於磷化鎵材質上製備粗糙化氧化鋅掺鋁薄膜，這一結構應用於鋁鎵銦磷(AlGaInP)發光二極體上在20mA處其光萃取效率改善了129.9%。於氮化鎵材質上製備選擇性高障礙區，這方法應用於氮化鎵(GaN)發光二極體上在20mA處其光萃取效率改善了12%。這些研究證實了表面處理技術對光電元件中效率參數的重要性。

In recent years, the large-scale consumption of Earth’s energy resources has increased fossil-fuel and electricity costs; therefore, the rapid development of renewable energy and energy-efficient technologies is necessary. To achieve renewable energy and energy-saving technology, optoelectronic devices of solar cells in solar power have received particular attention, and optoelectronic devices of light-emitting diodes (LEDs) solid-state lighting in energy-saving technology have received particular attention. Because they are environmentally friendly, safe, durable, easy to install, and do not require a specific installation environment. The purpose of solar cells is improved conversion efficiency, and the purpose of LEDs is improved light-extraction efficiency. Improvement in efficiency is closely related to the surface treatment of optoelectronic devices.
Thus, in this study, the surface of gallium phosphide (GaP), textured crystalline silicon (TCS), gallium nitride (GaN), and glass materials were processed using surface-treatment technology. The following samples were fabricated: a SiOx/SiOxNy/SiNx structure in TCS, a porous SiO2/MgF2 structure in glass, a textured AZO in GaP, and a selective high-barrier region (SHBR) in GaN. The average reflection of the SiOx/SiOxNy/SiNx structure in TCS decreased to 2.01% (1100 to 300 nm). In comparison with untreated TCS solar cells, applying the experimental SiOx/SiOxNy/SiNx structure to conventional TCS solar cells improved the short-circuit current density (Jsc) by 7.78%, and the solar-cell efficiency by 10.95%. The average reflection of the porous SiO2/MgF2 structure in glass decreased to 2.01% (1200 to 400 nm). Application of the porous SiO2/MgF2 structure to conventional silicon-based tandem solar cells resulted in 6.82% and 10.95% improvements in Jsc and efficiency, respectively. For the textured ZnO:Al (AZO) structure fabricated in GaP at 20 mA, the relative luminous intensity of textured AZO AlGaInP LEDs increased by 129.9% compared with a conventional sample. For the SHBR structure fabricated in GaN, at 20 mA, the relative luminous intensity of GaN LEDs increased by 12% compared with a conventional sample. These results confirmed the importance of surface-treatment technology on efficiency parameters in optoelectronic devices.

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