本論文主要是研究五環素有機場效電晶體與金屬鋁的界面反應機制。在本實驗中利用同時蒸鍍五環素和金屬鋁的混蒸實驗，驗證兩者之間有反應產生並可加速電洞流消失的反應時間，藉由調控混蒸的比例和厚度可以達到有效阻擋電洞傳輸的效果。利用吸收光譜和電流模型加以分析，可以架構出五環素和金屬鋁之間反應後造成能帶的移動而去阻擋電洞的注入。進一步使用ultraviolet photoemission spectroscopy (UPS)驗證五環素和金屬鋁反應後確實會使能帶位置有所改變。此研究使我們對於金屬和有機材料兩者接觸的反應有更一步的了解。

This paper focuses on the reaction of aluminum and pentacene on n-type field-effect transistors. When a co-evaporated film of aluminum and pentacene is inserted between the metal electrode and semiconductor layer, the hole current decreases very quickly. By optimizing the proportion and thickness the co-evaporated film can achieve the effect of blocking hole curriers, and the performances of n-type pentacene-based field-effect transistors are enhanced. This works suggests that the level of the highest occupied molecular orbital (HOMO) of pentacene molecules are changed in the reaction of aluminum and pentacene characterized by ultraviolet-visible absorption spectroscopy (UV-Vis) and electrical characteristic analysis. The hole blocking model is also supported by the results of ultraviolet photoemission spectroscopy (UPS). This fundamental study provides deeper understanding of the metal/organic semiconductor reaction.

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