本論文研究以溫度波分析法理論為基礎，建立一套簡便、成本較低的奈米尺度下薄膜熱傳導係數實驗量測方法，本文將實驗架構分為電源供應設備、量測設備與熱源供應設備，待測薄膜為使用物理氣相沉積中的蒸鍍方法鍍製三種厚度(45 nm、92 nm、190 nm)的二氧化矽薄膜。
利用此量測實驗方法，本文研究了在常溫下三種不同厚度的二氧化矽薄膜其熱傳導係數隨厚度改變的影響，三種不同厚度的熱傳導係數量測結果分別為，0.61 (W/mK)、0.71 (W/mK)、0.84 (W/mK)，在溫度振盪頻率上選擇最適用的頻率以利於研究熱傳導係數隨溫度改變的影響，同時將量測到的數據與文獻比較，在驗證實驗量測方法準確後本文對600 nm厚度之二氧化矽薄膜進行研究分析，量測結果為控制溫度為300 K、溫度振盪頻率選用在0.025 Hz熱傳導係數為0.92 (W/mK)，並且找出二氧化矽薄膜其載子傳輸性質在400 nm以上為擴散型傳輸而在400 nm以下為波動型(彈道型)傳輸，溫度影響部分控制溫度範圍在290 K~350 K其熱傳導係數也隨著溫度上升而增加，在研究中也觀察到透過不同沉積方法鍍製的薄膜熱傳導係數也會有所不同，其熱傳導係數由高到低為TOD > PECVD > E-beam。

The research is based on the Temperature Wave Analysis method to establish an experimental method for measuring the thermal conductivity of Nanofilms. The experimental structure is divided into power supply equipment, measurement equipment, and heat source equipment. The film to be tested with three thicknesses (45 nm, 92 nm, 190 nm) of silicon dioxide film using the E-beam method in the physical vapor method. The influence of the different film thicknesses on thermal conductivity is investigated. The results of the thermal conductivity of the three different thicknesses are 0.61 (W/mK), 0.71 (W/mK), and 0.84 (W/mK). The most suitable value for the temperature oscillation frequency is found that the thermal conductivity dependent on different temperatures.
After verifying the accuracy of the method, this study conducts research and analysis on a 600 nm nanofilm. At 300K, the temperature oscillation frequency is 0.025 Hz. The thermal conductivity is 0.92 (W/mK). The transport properties of the dioxide film above 400 nm are wave type (ballistic) transmission. The thermal conductivity in 290 K ~ 300 K also increases with the raised temperature.
In the research, it has also been observed that the thermal conductivity of films deposited by different deposition methods will also be different, and the thermal conductivity of films from high to low is TOD > PECVD > E-beam.

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