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研究生：	夏姆 YADAV, SOMESH
論文名稱：	CuSCN與MoS₂薄膜製備, 特性研究及其在自供電寬頻光電感測器之應用 The Deposition and Properties Investigation of CuSCN and MoS₂ for Self-Powered Broadband Photodetectors Application
指導教授：	朱聖緣 Chu, Sheng-Yuan
學位類別：	碩士 Master
系所名稱：	智慧半導體及永續製造學院 - 半導體製程學位學程 Program on Semiconductor Manufacturing Technology
論文出版年：	2026
畢業學年度：	114
語文別：	英文
論文頁數：	73
外文關鍵詞：	MoS₂, CuSCN, photodetector, self-powered, heterojunction
相關次數：	點閱：19 下載：0
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This research focuses on the development and characterization of a self-powered broadband photodetector using a heterojunction composed of molybdenum disulfide (MoS₂) and copper(I) thiocyanate (CuSCN). The objective is to fabricate a device that operates without external power, offering high sensitivity across a broad spectral range. Firstly, MoS₂ was synthesized using a bottom-up thermal sulfurization method via decomposition of Ammonium Tetra thiomolybdate precursor films, allowing controlled growth of thin films with tunable thickness. CuSCN, serving as the p-type semiconductor, was deposited on MoS₂ by spin-coating from a diethyl sulfide solution, forming a p–n heterojunction. In order to Characterize techniques such as Raman spectroscopy, photoluminescence (PL) and I-V were employed to evaluate structural, optical, and electrical properties. The Raman and PL spectra confirmed the quality and layer number of MoS₂ films based on precursor concentration. Further, the Hall measurements demonstrated improved carrier mobility with optimized sulfur content during annealing process. The optical and morphological Characterization revealed uniform, continuous films with minimal defects. The fabricated MoS₂/CuSCN photodetector exhibited strong rectifying behavior and responsive photocurrent under illumination, confirming effective charge separation and transport in the heterojunction. The study concludes that MoS₂ and CuSCN form an efficient self-powered photodetector structure. By optimizing precursor concentrations and interface conditions, device performance can be Further enhanced. The method is scalable and compatible with CMOS technology, making it promising for future flexible, energy-efficient optoelectronic applications.

Abstract	I
Acknowledgement	II
Table of Contents	III
List of Figures	VI
List of Tables	IX
Chapter 1 Introduction	1
1 Background and Motivation	1
2 Research Gap and Problem Statement	4
3 Goals of the Study	5
4 Scope and Significance	6
Chapter 2: Literature Review	7
1 Foundations of Self-Powered Photodetectors	7
2 MoS₂ in Photodetection	7
2.1 Optical and Electronic Properties	7
2.2 MoS2 based Photoconductor	8
2.3 MoS2 based Photodiode	9
2.4 MoS2 based Phototransistor	10
2.5 MoS2 based self-powered photodetector	12
3 CuSCN as a p-Type Transparent Semiconductor	14
3.1 Material Advantages	14
3.2 Relevance to Photodetector Design	14
4 MoS₂/CuSCN Heterojunction: Working Principle	14
5 Synthesis Methods of Molybdenum Disulfide and Literature Review	15
5.1 Mechanical Exfoliation	16
5.2 Liquid phase exfoliation	17
5.3 Hydrothermal synthesis	18
5.4 Chemical Vapor Deposition	19
5.5 Thermolysis synthesis	20
5.6 CuSCN Deposition	21
6 Contacts and Interface Engineering	21
7 Introduction of Parameters for Photodetectors	22
7.1 Response time (Rise time & Fall time)	22
7.2 On/off Ratio	23
7.3 Responsivity	23
7.5 Power Law	24
7.6 Carrier Mobility	25
8	Literature Surveys Focused on p–n Photodiodes	26
8.1 MoS₂ p–n Junction Photodetectors	26
8. 2 CuSCN p–n Junction Photodetectors	26
8.3	Compact Literature Summary	27
9 Summary and Research Gap	27
Chapter 3 Experiment	29
1 Fabrication Equipment	29
1.1 Spin-coater	29
1.2 Furnace Tube	30
1.3 Thermal Evaporation System	31
2.5 Raman Spectra	31
2.6 Photoluminescence Spectroscopy ( PL Spectra)	32
3 Electrical Analysis Equipment	33
3.1 Agilent B1500A	33
4 Fabrication Processes of Mos2/CuSCN Heterojunction PD	34
4.1 Substrate Cleaning	34
4.2 Precursor Film Deposition	35
4.3 MoS2 film deposition by thermolysis method	36
4.4 CuSCN film deposition by Spin Coating Method	37
4.5 Electrodes deposition by Thermal Evaporation System	38
Chapter 4  Results and Discussion	39
1 Thin Film Physical Properties	39
1.1 Real photo and OM images	39
1.2 Raman Spectra result	40
1.3 Photoluminescence Spectra results	42
1.4 Hall measurement results	44
2 Thin Film Electrical Properties	45
2.1 Current–Voltage (I–V) Characteristics of MoS₂ Thin Film Device	46
2.2 Current–Time (I–t) Curve of Mos2/CuSCn Heterojunction Photodetectors different layers of Mos2	47
2.3 Rise and Fall Time of Mos2/CuSCN Heterojunction Photodetectors Different layers of Mos2 	49
2.4 Responsivity & Detectivity	51
2.5 Energy Band Diagram	52
2.6 Comparison with another MoS2  p-n junction Photodetector Devices	53
2.7 Comparison with another CuSCN p-n junction Photodetector Devices	54
2.6 Comparison with another p-n junction Photodetector Devices	55
Chapter 5 Conclusion	56
Chapter 6 Future Work	57
References	58
                                    

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