本論文利用室溫下的光調制光譜研究砷銻化鎵的表面本徵-N+摻雜(Surfaceintrinsic-N+，SIN+)結構的表面費米能階及表面態密度。根據熱離子輻射理論及電流傳輸理論，半導體表面費米能階VF及其表面態密度可由其表面勢壘與激發光強度的關係求得。本論文首先量取不同激發光強度下的光調制光譜並求出各不同激發光下的表面勢壘，再與理論所推導的公式擬合，求得不同組成比砷銻化鎵的表面費米能階及幾何因子，得到費米能階隨組成比呈線性關係。最後利用擬合所得的幾何因子，得表面態密度，發現其高表面態密度是造成砷銻化鎵的費米能階強釘札的原因。

其次為利用螢光光譜研究氮化銦/氮化鎵多層量子井結構，在不同氮化銦量子井厚度及不同溫度(15K~315K)下，發射頻率與發射效率的變化。從螢光光譜可以得知隨著氮化銦厚度增加而發射頻率呈紅位移；此外，從譜線分析亦可得到，內部量子效率是隨著氮化銦厚度增加而增高。但4 nm厚的氮化銦量子井，其效率突然往下掉，從其X-Ray Diffraction(XRD)探討其原因，證實是因為氮化鎵與氮化銦介面不平整缺陷所造成。

Room-temperature photoreflectance (PR) is employed to investigate the Fermi level pinning and surface state density of the GaAs1-xSbx surface intrinsic-n+(SIN+) structures with different Sb concentration. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and the surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The evolution of the GaAs1-xSbx surface Fermi level as a function of Sb composition can be fitted linearly. Finally using the relation between the surface state density and the Geometry factory, the surface state densities are determined. The high surface state densities make the surface Fermi level of the GaAs1-xSbx to be strongly pinned.

In the second part, the photoluminescence (PL) under various temperatures is employed to investigate the emission energy and the emission efficiency of the InN/GaN multiple-quantum-well (MQW) with various well thicknesses. The emission energy shifts to longer wavelengths with increasing InN well thickness. The internal quantum efficiency (IQE) obtained increases with the InN quantum well thickness. However, as the well is thicker than 3nm, the IQE decreases dramatically. From the results of x-ray diffraction spectra, the higher defect density due to the high interface roughness causes the IQE to reduce sharply.

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