| 研究生: |
冷牧謙 Len, Mu-Chien |
|---|---|
| 論文名稱: |
低溫燒結之積層式氧化鋅變阻器之電性及突波吸收能力之研究 Electrical properties and Energy absorption capability of low-temperature sintered multilayer ZnO varistors. |
| 指導教授: |
向性一
Hsiang, Hsing-I |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 資源工程學系 Department of Resources Engineering |
| 論文出版年: | 2020 |
| 畢業學年度: | 108 |
| 語文別: | 中文 |
| 論文頁數: | 99 |
| 中文關鍵詞: | 低溫燒結 、變阻器 、高非線性指數 、突波電流 、預先煆燒 |
| 外文關鍵詞: | Low-temperature sintering, varistor, High nonlinear coefficient, surge current, calcination |
| 相關次數: | 點閱:70 下載:0 |
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本研究透過傳統之固態反應法,使Bi2O3-Sb2O3-Co3O4-Mn3O4-Nb2O5氧化鋅變阻器於860℃-880℃的低溫下燒結,其非線性指數為50< α <80、突波電流吸收能力最高為120A。首先於ZnO變阻器中摻雜不同含量之SiO2及B2O3,了解其變阻性質、微觀結構之變化。研究顯示隨SiO2之添加,α值從未添加SiO2的51提升至添加1.0wt% SiO2的66;崩潰電壓從834V/mm提升至1260V/mm。而隨SiO2的過量添加,α值從添加1wt% SiO2的66逐漸下降至添加2.0wt% SiO2的52;崩潰電壓則是持續上升。而透過SiO2-B2O3的添加,藉二摻雜劑之液相輔助燒結效果,使有效晶界數目提升,同時促進了晶粒成長,使坯體緻密性提升,α值從未添加B2O3的66提升至添加2.0wt%的83;崩潰電壓從1260V/mm下降至1120V/mm。最後決定SiO2及B2O3最佳添加量依序為1.0wt%及1.5wt%。接著為了使ZnO變阻器之緻密化溫度下降,研究了Bi2O3、Sb2O3混合粉末預先進行煆燒後,對緻密化溫度之影響。研究顯示當Bi2O3、Sb2O3之混合粉末預先在550℃下進行煆燒處理,其樣品在燒結過程中,坯體得以形成較少量之Pyrochlore二次相而具有較大量之液相成分,故在燒結完成後,坯體緻密化程度較高,變阻性質也因此較優異。最後,為了使ZnO變阻器之突波電流吸收能力提升,研究了ZnO、Co3O4、Mn3O4混合粉末預先進行不同熱處理後,樣品之突波電流吸收能力變化,研究顯示當ZnO、Co3O4、Mn3O4混合粉末預先以600℃煆燒6小時,製作之變阻器樣品,其可承受最大突波電流(突波波形為8/20μs),可從ZnO、Co3O4、Mn3O4未經處理之普通樣品的80A提升至120A(電極重疊面積:4.84 mm2)。主要原因為ZnO、Co3O4、Mn3O4粉末經600℃煆燒6小時後,ZnO半導化,具有最多[Co_Zn^·],也因此其晶粒電阻從未經煆燒的1680Ω降至350Ω,除此之外,當Co3+取代Zn2+,ZnO亦伴隨產生V_Zn^'缺陷,故當ZnO、Co3O4、Mn3O4粉末經600℃煆燒6小時後,ZnO亦具有最多[V_Zn^'],促進了ZnO晶粒在燒結初期之成長,樣品之晶粒尺寸最大,導致樣品之崩潰電壓及總電阻相對較小。
In the study, low temperature (860℃ to 880℃) sintered ZnO-Bi2O3-Sb2O3-Co3O4-Mn3O4-Nb2O5 (ZBSCMN)-based varistors with coefficients(α) ranging from 50 to 80 and superior energy absorption capability of 120A (Electrode area=4.84mm2) were successfully prepared. For first part of the study, the effects of SiO2 and B2O3 addition on the crystalline phase, microstructure, and electrical properties of the ZBSCMN based varistors were investigated. The varistors sintered at 860℃ for 2h, with VB=1120 V/mm, α=83, and IL=0.09μA can be obtained by adding with 1.0wt% SiO2 and 1.5wt% B2O3. In the second part of the study, the effect of the pre-calcination of Bi2O3 and Sb2O3 mixture on the densification, microstructure and electric properties of varistors were investigated. XRD and DIL results showed that pyrochlore phase (Zn2Bi3Sb3O14) which inhibited the densification and grain growth was decreased by 10% by pre-calcination of Bi2O3 and Sb2O3 mixture at 550℃ for 6 h, leading to more liquid phase and hence increasing the sintered density at temperatures below 900oC. In the last part, the effect of the pre-calcination temperature of the mixture of ZnO, Co3O4, and Mn3O4 (ZCM) on the electric properties and energy absorption capabilities of ZBSCMN-based varistors were investigated. The result shows the optimum energy absorption capability of ZBSCMN-based varistors can be obtained by the pre-calcination of ZCM mixture at 600℃ for 6h due to the lowest grain resistivity.
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