| 研究生: |
蘇威綸 Su, Wei_Luen |
|---|---|
| 論文名稱: |
偏壓調致發光元件的模擬研究 Simulation Study of Bias Induced Color-tunable Emitters (BICE) |
| 指導教授: |
張允崇
Chang, Yun-Chorng |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 光電科學與工程研究所 Institute of Electro-Optical Science and Engineering |
| 論文出版年: | 2006 |
| 畢業學年度: | 94 |
| 語文別: | 中文 |
| 論文頁數: | 79 |
| 中文關鍵詞: | 載子 、半導體 、模擬 |
| 外文關鍵詞: | Carrier, Semiconductor, Simulation |
| 相關次數: | 點閱:100 下載:2 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
在此篇論文中,首先我們簡短介紹了已發表於期刊中的Bias Induced Color tunable Emitter(BICE)發光元件,並以ISE-TCAD模擬軟體來模擬輸入不同偏壓於Base、Cathode及Anode三端時BICE的操作模式。從模擬結果發現,當元件操作在Forward Active Mode時,此時介於Base與Cathode兩電極間為正偏壓(V1),電子流將由位於元件下端的Cathode流入主動區,同時由於能帶的傾斜使得位於主動區上層的Multiple Quantum Well(MQW)不容易收集載子,因此造成位於主動區下層的Single Quantum Well(SQW)載子收集量大於上層MQW,因此偏壓在Forward Active Mode時,位於下層的SQW收集較多的載子而有較高的發光強度。而當元件操作在Reverse Active Mode時,此時V1為負偏壓,電子流由位於元件上端的Base流入主動區,同時由於能帶的傾斜度小,使得位於主動區上層的MQW載子收集較不受影響,而收集到比下層的SQW更多的載子,因此偏壓在Reverse Active Mode時由位於上層的MQW收集較多的載子而有較高的發光強度。此一模擬結果與期刊中所描述的BICE元件實驗結果相符。
我們更進一步以模擬程式來探討不同元件結構對BICE元件操作模式的影響。從模擬結果發現,上層的MQW週期數需同時考慮兩個操作模式的對比而有一個最佳的數量。而量子井組間的間隔寬度增加則會增加對比率,不過超過一定距離後其變化趨於緩和。而MQW與SQW位置的互換則會使得元件變成單一操作模式,失去了BICE模式調變能力,因此必須小心設計BICE元件。
接著我們同樣以ISE-TCAD為工具,適當的調整量子井的週期數與寬度而成功模擬出可以有三個操作模式的三光波段BICE元件。此一元件於V1等於0以及V1大於或小於0可得到三個操作模式。在各模式中與其對應的量子井會有最大的載子收集量。彼此之間的對比可經由調整量子井組之間的間隔來得到最大的對比。
總結來說,我們以 ISE-TCAD為工具,成功驗證其不同的操作模式,與期刊上的實驗結果相符,適當的改變元件結構可以增加不同模式的對比。最後我們設計一個有三個操作模式的BICE元件,並以模擬結果驗證其操作模式。因此一個具有多種操作模式的BICE元件是可能的。
In this dissertation, the concepts of the Bias Induced Color-tunable Emitters(BICE) was introduced. Simulation software ISE-TCAD was used to simulate different operation modes by different biasing combinations between base, cathode and anode electrodes. It can be observed that a positive voltage bias (V1) is presented between base and cathode electrodes when the device is operated in the Forward Active Mode. The electric current flows into the active region from the cathode located at the bottom of the device. A larger slope of the bandedges at the Multiple Quantum Well (MQW) in the top of active region was observed from the simulation results, which also decreases the carrier collection efficiency of the MQW. Therefore the Single Quantum Well (SQW) in the bottom of active region can collect more carriers than MQW in the top of active region. This results in a
higher luminous intensity from the Single Quantum Well (SQW) in the top of the active region. When the device is operated in the Reverse Active Mode, V1 is negative and the electric current flows into the active region from base in the top of device. The slopes of the bandedges are smaller so the MQW carrier collection is not affected and can collects more carries than the SQW. Therefore, MQW in the top of active region can collect more carriers and has more luminous intensity. The simulation results agree with the results from the experiments reported in the referred journals. This indicates that the simulation can be used to correctly simulate the operation of the actual device.
Based on the previous work, a more detailed analysis for the BICE is studied using the same simulation tool. Different device structures, including the number of the MQW and the distance between MQW and SQW, are examed. The simulation results indicate that a optimized number of the MQW exists, which is a compromised number between two operation modes. Longer distance between two sets of quantum well results in a higher contrast between two operation modes. However, the contrast change becomes insignificant after the distance reaches a certain value. In addition, the position exchange for the MQW and SQW results in a loss of one operation mode.
At the end of this dissertation, a new BICE device structure which have three operation modes is proposed. This new BICE device is capable of emiting three different wavelengths. The three operation modes is controlled by different V1 (V=0, V1>0 and V1<0). A optimized contrast between each mode can be obtained by carefully adjusting the distance between each set of quantum wells.
In conclusion, the operation of BICE is simulated using ISE-TCAD as the simulation tool. We successfully verified the different operation modes from the simulation results. The effect of different device structures on the operation modes were also examed. Finally, a newer design of the BICE device with three operation modes is proposed and the operation is confirmed from the simulation results. Therefore, it is possible to design a BICE device of many operation modes, which is very important for various lighting applications..
[1] D. Zhang, F. E. Reed, T. Zhang,N. V. Edwards, and R. M. Kolbas ,”
Two-terminal bias induced dual wavelength semiconductor light emitter”
Appl. Phys. Lett. Volume 63, pp. 3367, 1993.
[2] F. E. Reed, D. Zhang, T. Zhang, and R. M. Kolbas , “Three-terminal bias
induced dual wavelength semiconductor light emitter” Appl. Phys. Lett.
Volume 65, Issue 5, pp. 570-572, 1994.
[3] Frederick E. Reed, ”The Development of Bias Induced Color-tunable Emitters
(BICE)” PH. D. Dissertation, North Carolina State University, 1997.
[4] D. Zhang,” Optical Properties of Semiconductor Nanostructures and
Devices”, PH. D. Dissertation, North Carolina State University,1993.
[5] Donald A. Neamen, 半導體物理元件。台商圖書,2003。
[6] 施敏,半導體元件物理與製程技術。國立交通大學出版社,2003。
[7] M. Grupen and K. Hess, “Simulation of Carrier Transport and Nonlinearities
in Quantum Well Laser Diodes,” IEEE Journal of Quantum Electronics, vol.
34, no. 1, pp. 120–140, January, 1998.