本實驗研究以高介電係數的金屬氧化物(Al2O3)作為介電層與小分子PTCDI-C13H27為主動層的N型元件。藉由量測元件的電特性如輸出電流曲線、轉換特性曲線與電容量測，探討元件製作在不同基板(玻璃基板與PES軟板)上是否會影響元件整體的電特性，以及將元件製作在PES軟板上並利用線性移動式平台將撓曲元件的曲率半徑控制在r = +40、+20、+10 mm與r = -40、-20、-10 mm 下由0次撓曲至10000次，並在過程中量測元件的輸出電流曲線、轉換特性曲線以及元件MISM結構的電容量測，測試軟性有機薄膜電晶體的機械穩定性。
在不同基板上的元件中，從元件之電特性結果可得知其基板材質並不會影響介電層阻擋漏電流的能力以及通道電流的大小。從MIM與MISM結構的元件電容值來看，不同的基板也並不會改變整體元件的電容值。
在軟板撓曲實驗中，以r = +40、+20、+10 mm與r = -40、-20、-10 mm撓曲由0至10000次的過程中，發現撓曲過後元件的飽和電流值會跟著撓曲次數的增加而下降，次臨界擺幅值與臨界電壓值則會跟著撓曲次數的增加而上升，且曲率半徑的減少其飽和電流值下降的幅度，以及次臨界擺幅值與臨界電壓值上升的幅度都更劇烈。在電容量測方面，元件MISM結構的電容值會隨著不斷的撓曲而在累積電荷區出現下降的趨勢，代表介電層隨著撓曲次數的增加而受到嚴重的影響。

In this thesis, we discuss the N,N’-ditridecyl-3,4,9,10-perylene tetra carboxylic acid imide (PTCDI-C13H27)-based organic thin-film transistors (OTFTs) fabricated on different substrates including rigid and flexible substrates. A linear mobile platform was used to control the curvature of the devices formed on the PES substrate to study the mechanical electrical stabilities. Bending radius of 10, 20 and 40 mm, and 10,000 bending times were performed on the flexible devices under both compressive and tensile states. Interestingly, the drain current of the devices increases with increasing the bending times under the curvature of 20 mm.
The electrical characteristics of all devices analyzed by use of transistor, metal-insulator-metal (MIM) structure, and metal-insulator-semiconductor-metal structure indicate that the performances of devices was unrelated to the type of substrate. However, the saturated drain currents of the flexible devices decreased with increasing the bending times, besides the curvature of 20 mm. The subthreshold swing and the threshold voltage increased with increasing the bending times for all bending curvatures. To realize the mechanism of the decrease of electrical performances under large bending times, the capacitance measurements were performed on the flexible devices with MISM structure. The capacitance of flexible device in the cumulative charge region decreased with increasing the bending times, indicating that the bending process damaged the dielectric layer.

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