在製備垂直元件的過程中，基板置換技術是相當關鍵極且重要的。它除了實現垂直導通的電流路徑，更可提供元件熱能傳導之散熱路徑。在本文中，我們採用導電及導熱性良好的金屬銅基板，配合雷剝技術完成垂直結構元件與傳統藍寶石基板上橫向元件相比較，其所製作之元件在注入電流為350mA時，順向壓降(VF)為3.59V同時光輸出增加96%。同時透過量測峰波長(peak wavelength)與電流相依關係，顯示導電性良好的金屬銅基板對於元件的熱積聚集效應提供了顯著的改善效果。接著由接面溫度量測，得知具金屬銅基板之元件，將可有效抑制接面溫度之提升，並使得元件可靠度獲得改善。

For the fabrication of vertical thin-GaN light-emitting diode(LED), substrate transfer techniques play an important role. It not only enables vertical conduction, but also provide device a way of heat conduction. In this paper, we use copper substrates which has excellent electrical conduction and heat conduction metal to combine laser lift-off (LLO) technology to compare with conventional sapphire substrate LEDs. At 350mA,a forward voltage drop (VF) of 3.59V and an improvement in light output power (Lop) of 96%. Using measure peak wavelength depend on the current, the heat collect effect improved with the conductivity well metal copper substrates. Through measure of junction temperature, a result can be available that both junction temperature suppressed and the reliability raised by utilizing copper as metal substrate on devices.

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