在本論文中，我們專注於應用在藍芽標準的射頻前端接收模組上。此模組使用相對介電係數為4.4板厚為0.8mm的FR4基板以降低成本。另外，我們使用簡易的架構設計電路以縮減尺寸。此模組是由帶通濾波器、低雜訊放大還有混頻器所組成。最後量測結果得到如下:功率增益約為11.45 dBm，雜訊指數為11.5 dB，輸入三階截斷點為-3.45 dBm。
此外，電路之間的連接考量也將被討論。我們試著使用斜切彎角來補償不連續的效應；而且，斜切的方法可改善電路之間的返射損耗1~2dB。
使用切換式共振腔設計的三頻壓控振盪器被提出。此壓控振盪器是以台積電0.18 m 1P6M CMOS製程且操作在1.8V下製作，其晶片尺寸為0.66mm2。這裡利用切換電感和電容的結合達到多頻的需求。在0.9 GHz、1.8 GHz 和2.4 GHz時距離振盪頻率1MHz處的相位雜訊分別為-124.8dBc/Hz、-125.2dBc/Hz 與 -122dBc/Hz 。

In this thesis, we focus on RF front-end receiving module for Bluetooth standard. In order to decrease cost, it is based on FR4 substrate with a relative dielectric constant of 4.4 and a thickness of 0.8 mm. Besides, we use simple structure to design circuits to reduce the dimensions. The module consists of band pass filter, low noise amplifier, and mixer. The measurement results of the module are as follows: power gain is about 11.45 dBm; NF is 11.5 dB; IIP3 is -3.45 dBm.
Furthermore, the interconnection considerations between circuits or modules are also discussed. We try to use mitred bends to compensate the effect of the discontinuities. Besides, mitred bends method could improve return loss 1~2dB between circuits.
The design of using switched resonator tri-band VCO is presented. The VCO fabricated by the TSMC 0.18 m 1P6M CMOS process is operated at 1.8V with die size of 0.66mm2. Using a combination of inductor and capacitor switching provides demands for multi-band. At 1MHz offset, the phase noises are -124.8dBc/Hz, -125.2dBc/Hz and -122dBc/Hz at 0.9 GHz, 1.8 GHz and 2.4 GHz, respectively.

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