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研究生: 賴柜宏
Lai, Ju-Hong
論文名稱: 白金錳/玻鏌合金之交換耦合效應:多層膜成長白金錳合金及退火處理研究
Study of exchange bias by multilayer growth of [Pt/Mn] and annealing treatment
指導教授: 黃榮俊
Huang, J.C.A.
學位類別: 碩士
Master
系所名稱: 理學院 - 物理學系
Department of Physics
論文出版年: 2003
畢業學年度: 91
語文別: 中文
論文頁數: 110
中文關鍵詞: 退火處理白金錳交換耦合
外文關鍵詞: PtMn, exchange bias, annealing treatment
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  • 本實驗乃研究於PtMn/NiFe之雙層膜系統中,錳成分變化以及退火處理對於交換偏移的影響。同時為了能精密的控制錳的成分變化,我們利用多層膜的方式來成長PtMn反鐵磁層,藉由不同厚度的Mn來改變Mn在PtMn裡頭的含量。
    這裡我們選擇以Al2O3(1-102)為基板、以Mo作為緩衝層(200Å)、以及NiFe合金作為鐵磁層(70Å),最後再以[Mn tMnÅ/Pt 2Å]多層膜為我們的反鐵磁層(tMn=2.0~3.5)。
    經由MOKE量測可知當[Mn 2.5Å/Pt 2Å]時具備有最大的交換偏移效應(95Oe),並且在經過退火處理之後更增加至360Oe左右,說明了退火處理對於交換偏移具有相當程度的影響。
    經由X光繞射分析可知,[Mn 2.5Å/Pt 2Å]/NiFe的PtMn具備有最佳的FCT有序結構,同時經過退火處理後FCT結構有明顯的增加。這樣的結果似乎說明了FCT結構與交換偏移場有相當密切的關係。

    We studied effects of Mn concentration and annealing treatment on the exchange biasing of NiFe/PtMn. By multilyer growth of [Mn/Pt], the Mn concentration can be exactly controlled with various Mn thickness. [Mn tMnÅ/Pt 2Å]30 (tMn=2.0~3.5Å) multilayers were deposited under NiFe(70Å) ferromagnetic layer grown on Mo (200Å) buffer layer on Al2O3(1-102). Among the various Mn thickness, the exchange biasing filed(Hex) of as-deposited [Mn 2.5Å/Pt 2Å]30/NiFe was largest(~95 Oe) and could be increased to ~360 Oe after annealing treatment at 250℃. The enhancement of Hex in [Mn 2.5Å/Pt 2Å]30/NiFe is much stronger than those of [Mn 2.0,2.25,2.75,3.0,3.2Å/Pt 2Å]30/NiFe samples.(Fig.1) Further, X-ray diffraction also indicates that the amounts of the ordering structure (face-center-tetragonal structure, FCT) in [Mn 2.5Å/Pt 2Å] mutilayer are biggest before and after annealing treatment. A clear correlation between the FCT structure and Hex in [Mn/Pt]/NiFe is found by controlling Mn concentration and the annealing study. Hex of [Mn tMn/Pt 2Å]/NiFe is determined by the amount of FCT structures and the enhancement of Hex after annealing treatment is likely due to the increase of FCT structures.

    目 錄 第一章 簡介 §1-1 前言…………………………………………………………1 §1-2 目前的研究…………………………………………………6 §1-3 實驗動機……………………………………………………12 第二章 基礎理論介紹 §2-1 磁性異向性介紹………………….……………….….…….13 2-1.1磁晶異向性……………………………………………...14 2.1.2應力異向性……………………………………………...17 2-1.3交換異向性……………………………………………...21 §2-2 交換異向性的理論機制 2-2.1理想介面模型…………………………………………...24 2-2.2磁區壁模型……………………………………………...26 2-2.3混亂磁區模型…………………………………………...27 第三章 實驗儀器介紹與實驗步驟 §3-1 分子束磊晶系統……..…………………………….……….30 §3-2 實驗測量儀器…………………………………….…….…..37 §3-3 實驗步驟..…………………………………………………..52 第四章 結果與討論 §4-0 引言…………………………………………………………55 §4-1 磊晶結構對於交換偏移場之影響…………………………57 §4-2 不同成分比例交換偏移場之影響…………………………71 §4-3 退火處理之影響……………………………………………85 §4-4 反鐵磁層之成長溫度效應…………………………………95 第五章 結論 …………………………………………………………………...104 參考文獻 …………………………………………………………………...107

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