在許多半導體製程中，鍍膜與基板長因殘留應力而裂開剝落，因此殘留應力應變的測量在許多方面的研究上都是一直是重要課題。目前用來測量材料應變的方式已有很多，而殘留應力都是以間接方式，藉由測量應變而得到，最常見的是利用X-ray繞射繞射峰之位移與鑽孔法，然而這些方法適用於巨觀的殘留應力，對局部的殘留應力則必須藉助其它精密測量方法。
本研究為國內首次採用電子背向散射繞射量測殘留應變，其主要原理係利用取得未受應力與受應力後晶軸(zone axis)軸向偏移的菊池圖，利用數位影像相關系數法測量各菊池圖中各晶軸因應力而移動，以晶軸偏移計算殘留應變的分析方法。
實驗規劃為三個部份，首先測量以數位光學量測應變軟體之精準度，並探討可能造成的誤差原因；利用測量到的晶軸位移套入變形模型並計算各方向上的應力，最後並探討晶體異向性的影響。實驗結果發現，影像相關法所得到解析度可準確至0.01pixel，並在各種影像用運動中，包括橫向與縱向平移、旋轉等表現出極高的可靠性，然而在雜訊的影響下，準確率會有個位數像素的影響。
此次實驗採用氮化鋁磊晶層成長於{111}方向的矽基板上作為將殘留應變導入的手段，實驗結果在越接近磊晶層的的位置有越大的殘留應變出現，在影像的解析度上利用影像相關法可得到 3.6x10-3 radian/pixel的解析能能力。
然而在計算結果上有誤差發生，蓋因為所取得的圖形越接近兩種不同元素交界，電子的運動被界面上的缺陷所影響而造成菊池圖影像上非晶軸移動的變化，致使影像相關法的測量結果產生錯誤。所以在未來的利用上必須注意影像的品質等問題。

Measurement of residual stresses plays a central role at many applications, such as semiconductor industries. There are different methods to measure residual stress, for example, X-ray diffraction and blind-hole method. These methods are able to measure macroscopic residual stresses and cannot be applied to determine the local stresses at the microscopic scale.
In this study, this is the first time in Taiwan to combine electron backscattered diffraction and digital image correlation method integrated to determine residual stresses. The principle of this novel technique lies on the displacement of the zone axis in Kikuchi patterns obtained from the electron backscattered diffraction system after staining. Digital image correlation method is used to calculate the displacement of zone axis which will be served as input data for calculating residual strain.
Before applying this novel technique the resolution of this displacement measurement software should be characterized by shifting and rotating the Kikuchi pattern. The results show that the precision of the digital image correlation method is down to 0.01 pixels.
After determining the resolution of displacement measurement software, the residual strain measurement was performed on (111) silicon wafer with an epilayer of aluminum nitride, which has a lattice mismatch with Si wafer and residual strain is introduced in the silicon substrate. The results show that the larger strain is measured close to interface between Si/AlN, and the prescription of the method is 3.6x10-3 radian/pixel. However, the deviations at the calculation of the residual strain can result from the image quality of Kikuchi patterns. The dark area in the Kikuchi patterns can be introduced by interaction between electrons and the interface boundary. In addition, the overlapped Kikuchi patterns from two different orientations can be formed in the vicinity of grain boundaries. In future, the improvement of the image quality of Kikuchi patterns is our key point at the further development of this novel technique.

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