在本論文中，我們利用分子束磊晶法成長及研製砷化銦鋁/砷化銦鎵變晶式高電子移動率場效電晶體。由於砷化銦鎵通道層具有較窄的能隙，因此可獲得較佳的載子傳輸特性並改善元件的轉導及高頻特性。然而，衝擊游離化效應通常伴隨著發生，而導致元件有較高的輸出電導與較低的崩潰電壓值。

　　為了改善扭結效應，我們探討具有雙平面摻雜層之變晶性高電子移動率電晶體，並分別鍍上鈦/金、金、鉑/金、鎳/金等不同的閘極金屬，探討其對元件特性的影響。不同的閘極金屬可以獲得不同的蕭特基能障，而當蕭特基能障變大時，會使得空乏區增大，並提高夾止特性及崩潰電壓值，進而減低衝擊游離化效應，同時扭結效應亦隨之改善。

　　此外，我們比較元件在室溫下的直流特性，並探討當溫度從300上升至510K時，元件對溫度的退化率。在室溫下，以鉑/金為閘極金屬之元件，具有較佳之崩潰電壓、最大轉導、電導、電壓增益、及高頻特性。在溫度為300至510K的範圍，以鈦/金為閘極金屬之元件，具有對溫度較佳之退化率，在導通電壓、臨限電壓、電導及電壓增益方面。

　　In this thesis, the In0.42Al0.58As/In0.46Ga0.54As metamorphic high electron mobility transistors (MHEMTs) grown by molecular beam epitaxy (MBE) system have been fabricated and investigated. Due to the narrow gap property of the In0.46Ga0.54As channel layer, better carrier transport characteristics have been obtained to improve the transconductance and high-frequency characteristics of the studied device. Nevertheless, the impact ionization effects usually accompany within the narrow bandgap InGaAs channel. These problematic effects result in higher output conductance and lower breakdown voltage of the studied device.

　　In order to improve the kink effects, we have investigated the double d-doped MHEMT by evaporating gate-alloys, including Ti/Au, Au, Pt/Au, and Ni/Au as the Schottky contacts to discuss their respective influences on device performance. Since different metal work function can get different Schottky barrier height, the Schottky barrier heights increase can make the channel’s depletion region increase and enhance the pinch-off characteristics and the breakdown voltage obviously. Then, impact ionization and the related kink effects within the channel can be eliminated.

　　Furthermore, we compare the DC performances of the studied devices at room temperature, and discuss the temperature degradation rate with increasing the temperature from 300 to 510K. At room temperature, the device with Pt/Au gate metal shows better performances in BVGD, gm,max, gds, AV, fT, and fmax. At the regime of 300 to 510K, the device with Ti/Au gate metal shows better temperature degradation rates in Von, Vth, gds, and AV.

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