本論文提供了一個新型態的薄膜覆晶式晶圓級及晶片尺寸封裝，搭配厚度30um，不同堆積密度及不同折射率矽膠的新螢光粉薄膜。利用螢光薄膜層層堆疊在單顆晶片尺寸封裝的方式來研究其光特性。相對穿透藍光輻射強度隨著螢光層厚度增加而降低至一飽和值，而相對穿透螢光粉輻射強度則是隨著螢光層厚度增加而增加至一飽和值。堆積密度增加亦降低了相對穿透藍光輻射強度，同時相對穿透螢光粉輻射強度也增加了。具有較高堆積密度的螢光粉薄膜，其相對穿透螢光粉輻射強度隨著厚度增加，在飽和之後會開始下降。螢光粉的輻射轉換效率， 1.41折射率矽膠的螢光粉薄膜從一開始的66%~68%隨著厚度增加開始往下掉，而1.54折射率矽膠的螢光粉薄膜則從64%~69%隨著厚度增加往下掉。但是，1.41折射率矽膠的螢光粉薄膜，其輻射轉換效率掉的速度較1.54折射率矽膠的螢光粉薄膜為快。螢光粉薄膜發光效率（lm / O.W.）具有和相對穿透螢光粉輻射強度相同的趨勢，隨著螢光層厚度增加而增加至一飽和值，具有較高堆積密度的螢光粉薄膜，其相對穿透螢光粉輻射強度隨著厚度增加，在飽和之後會開始下降。1.54折射率矽膠的螢光粉薄膜之飽和發光效率約為240 lm/O.W.，高於1.41折射率矽膠的螢光粉薄膜之飽和發光效率，225 lm/O.W. ~ 230 lm/O.W.。然而，對於螢光粉堆積密度超過60%，厚度約30um的螢光粉薄膜來說，1.41和1.54折射率矽膠的發光效率幾乎相同，約230 lm / O.W.。最後，厚度30um和76um的1.41折射率螢光粉薄膜及厚度32um和108um的1.54折射率螢光粉薄膜之發光角色均勻性將被進一步量測。越薄的螢光粉膜厚度，其du’v’則越小，代表越好的發光角色均勻性。從研究來看，厚度30um，螢光粉堆積密度大於60%的1.41折射率螢光粉薄膜較適合晶圓級晶片尺寸封裝，因其較佳的角度色均勻性及相對於較接近1.54折射率螢光粉薄膜的發光效率，最重要的是通常1.41折射率矽膠較1.54折射率矽膠擁有較好的信賴性，更適於晶片尺寸的封裝。

In this paper, a new type of thin-film-flip-chip wafer-level-chip-scale-package with phosphor thin film has been presented. Phosphor films of 30um thickness with different packing density were used for packaging and the optical characteristics with increasing thickness by piling up phosphor sheet on one single chip-scale-packaging were studied. The relative transmitted blue power decreases and the relative transmitted phosphor emission power increases as film thickness increases or packing density increases as well, both reaching a saturated value. For higher packing density, the relative transmitted phosphor emission power also starts to drop after saturation. The radiative conversion efficiency of the phosphor films, starting from 66%~68% for 1.41 refractive index silicone and 64%~69% for 1.54 refractive index silicone, decreases as the film thickness increases. However, radiative conversion efficiency of phosphor films with 1.41 refractive index silicone drops more quickly than 1.54 refractive index silicone. The tendency of radiative efficacy is similar to the relative transmitted phosphor emission power. the radiative efficacy increases and reaches a saturated value as phosphor film thickness increases. For higher packing density, the radiative efficacy also starts to drop after saturation with increasing film thickness. The saturated efficacy value of the phosphor films with 1.54 refractive index silicone, which is about 240 lm / O.W., is higher than that with 1.41 refractive index silicone, which is about 225 lm / O.W. to 230 lm / O.W. However, for the highest packing density, said above 60%, and the thinnest film thickness, said 30um, the phosphor film with 1.41 refractive index silicone has almost the same radiative efficacy, which is 230 lm / O.W., as 1.54 refractive index silicone. Finally, the ACU of phosphor films with 1.41 refractive index silicone, 30um and 76um film thickness, and phosphor films with 1.54 refractive index silicone, 32um and 108um film thickness, was measured. For thinner phosphor film thickness, delta u’v’ of view angle is lower. From the study, a phosphor film with 1.41 refractive index silicone of high packing density, said >60%, and thin film thickness, said 30um, is more suitable for the thin-film-flip-chip wafer-level-chip-scale-package, because it has high radiative efficacy close to that of 1.54 refractive index silicone, and better angle of color uniformity, furthermore, the 1.41 refractive index silicone usually having better reliability than 1.54 refractive index.

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