本論文以射頻磁控濺鍍法成長摻雜氫之氧化鋅薄膜，研究主要分為兩大方向：(一)探討摻雜氫之氧化鋅薄膜中，導電性提高之原因；(二)於低溫下成長一具備低電阻率且高透光性之摻雜氫的氧化鋅薄膜。
實驗結果證實了氫摻雜確實可大幅地提升氧化鋅薄膜電性，並間接證實於未含摻雜物之氧化鋅薄膜中，成長環境中微量氫的摻入為造成氧化鋅導電度提高之原因，而非形成氧空缺或間隙鋅所致。此外，研究中將探討四項參數對摻雜氫之氧化鋅薄膜各項特性影響，其結論歸納如下：第一，過低的氫氣流量將造成摻雜量過低；而過高的氫氣流量則將對電子產生散射效應，因此有一最適當氫氣流量值；第二，愈低的成長壓力有助於氫的摻雜，提高薄膜導電性；第三，當基板溫度愈低時愈有利於氫的摻雜；第四，射頻功率對氫解離率、濺鍍率與薄膜結晶性會有影響，在85W時可成長一電阻率較低之薄膜。
在研究中，以氫氣組成比為40%、壓力為2 mtorr、溫度為150度C以及射頻功率為85W時，所成長之摻雜氫之氧化鋅薄膜其電阻率為7.06x10^(-4) Ω-cm ，對可見光穿透率在80% 以上，其電阻率為目前所有文獻中報導之最低值。

Radio-frequency magnetron sputtering method has been employed to deposit hydrogen doped zinc oxide. The mechanism of doping by incorporating hydrogen in zinc oxide was studied. Besides, attempts have been made to deposit at low temperature the hydrogen doped zinc oxide film with high conductivity and high transparancy in visible light range.
Hydrogen incorporation was demonstrated to be able to enhance the conductivity of zinc oxide significantly. Since hydrogen is ubiquitous and very difficult to be removed from the growth environment, the so-called undoped zinc oxide has low conductivity due to unintentional doping of hydrogen. Various properties of hydrogen doped zinc oxide were studied by varying the deposition conditions. An optimum hydrogen exists to minimize the resistivity of the doped zinc oxide film. When the hydrogen composition in the plasma is too low, the carrier concentration in zinc oxide film becomes low. When the hydrogen composition is too high, the donors in the zinc oxide film will induce electron scattering by the ionized impurities. Therefore, an optimum hydrogen composition exists. Lower deposition pressure facilitates the incorporation of hydrogen in the zinc oxide film, thus increasing the conductivity. Besides, low temperature deposition facilitates the hydrogen doping. Since radio-frequency power affects the degree of ionization of hydrogen in the plasma, the sputtering yield and the crystallization process, 85W is found to be the optimum power to obtain a high conductivity zinc oxide film.
The hydrogen-doped zinc oxide film in our studies can exhibit an average transmittance of above 80% in visible light range and a resistivity of 7.06x10^(-4) Ω-cm , which is the lowest value ever reported for zinc oxide.

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