本研究以純元素(Cu、In、Ga、Se)與硒化物(Cu2Se、In2Se3、Ga2Se3)二種類前驅物製作硒化銅銦鎵(Copper Indium Gallium Diselenide, CIGS)靶材，並利用脈衝雷射沉積法(pulsed laser deposition, PLD)製備CIGS薄膜。其後將所成長之CIGS薄膜進行不同溫度之退火處理，分析薄膜成份結構及其光電性質。以PLD之鍍膜結果來檢驗自製靶材並與商用靶材結果比較。
由研究結果得知，以硒化物前驅物於700 oC燒結8小時所製成之靶材，經由XRD分析得知具有單一CuIn0.7Ga0.3Se2結晶相，且燒結後之重量損失較小；其以PLD所製作之薄膜亦具有CuIn0.7Ga0.3Se2結晶結構，薄膜於500 oC退火1小時後，薄膜能隙值為1.21 eV，載子遷移率可提升至33 cm2 V-1 s-1；並由光電流量測，可得知薄膜於照光後電流可提升1.25倍，並可與Mo電極呈ohmic接面特性，可得知其與商用靶材薄膜具有相近的性質，因此以硒化物前驅物製作之靶材擁有可取代商用靶材進行PLD實驗之潛力。

In this study, we discussed different kinds of pure elements (Cu, In, Ga, Se) and selenide compounds (Cu2Se, In2Se3, Ga2Se3) precousors to synthesize the CIGS (Copper Indium Gallium Diselenide) targets and then used these homemade targets to prepare CIGS thin films by pulsed laser deposition (PLD). Furthermore, the effects of different annealing temperature on the structure, optical and electrical properties of these CIGS thin films were studied and compared with those of the commercial target.
After sintering at 700 oC for 8 hours, the target made from selenide compounds showed a pure CuIn0.7Ga0.3Se2 phase by XRD result and showed less weight loss. The CIGS thin films prepared by the selenide-compound target also showed the CuIn0.7Ga0.3Se2 phase. After annealing at 500 oC for 1 hour, the band gap energy of the film is 1.21 eV, and the carrier mobility rised to 33 cm2 V-1 s-1. From the photocurrent measurement, the current of the film is 1.25 times larger than dark current and it formed ohmic contact with Mo electrodes. The above results showed close to those of the films prepared by commercial target. After all, the results of selenide-compound target exhibited that it can be considered to substitute the commercial target in the PLD process.

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