我們使用離子束濺鍍系統(IBS)成長Fe3O4/ZnO多層膜系統，研究其退火處理後其結構與磁性的變化。由X-ray繞射及吸收光譜(XAS)分析的結果，我們觀測到此多層膜系統隨著退火溫度的昇高，原來的多層膜會逐漸變成Zinc ferrite結構。並發現此多層膜系統其飽和磁化量會隨著退火溫度而發生昇降的情形，可能與Fe3O4與ZnO發生固熔的比例多寡有關係。

The structure, magnetic and annealing properties of Fe3O4/ZnO multilayers has been studied by ion beam sputter. After annealing process, X-ray diffraction and absorption spectrum demonstrated that Fe3O4/ZnO multilayers gradually transform to zinc ferrite .In addition ,the variation magnetization of Fe3O4/ ZnO multilayers may be related to the mixture ration of Fe3O4 and Zinc ferrite in the annealing process。

參考文獻
第一章
[1]Yasuhiro Igasaki and Hiromi Saito, Thin Solid Films, 199(1991), 223-230
[2]Takashi Komaru et al., Jpn. J. Appl. Phys. Part Ⅰ,38(1999), 5796-5804
[3]M.T. Young and S.D. Keun, , Thin Solid Films, 410(2002), 8-13
[4]M.S. Wu, A. Azuma, T. Shiosaki, A. Kawabata, , IEEE Trans.Ultrasonics, 36(1989), 442-445
[5]Walter Water and Sheng-Yuan Chu, , Materials Letters, 55(2002),67-72
[6]Y.Yoshino, T. Makino, Y. Katayama and T. Hata, , Vacuum,59(2000), 538-545
[7]Z.Zhang and S. Satpathy, Phys. Rev. B 44, 13319 (1991).
[8]R.A. de Groot, K. H. J. Bushchow, J. Magn. Magn. Mater. 54-57, 1377 (1986).
[9]D.L.Peng , T. Asai , N. Nozawa Applied Physics Letters(2002)
[10]T.Fujii, M. Takano, R. Katano, and Y. Bando, J. Cryst. Growth 99, 606 (1990).
[11]D.M. Lind, S.D. Berry, G. Chern, H. Mathias and L. R. Testardi, J. Appl. Phys. 70, 6218 (1991).
[12]D.T Margulies, F.T. Parker, and A. E. Berkowitz, J. Appl. Phys. 75, 6097 (1994).
[13]Introduction to Magnetic Materials, edited by B.D. Cullity,
[14]Y.Suzuki, R.B. van Dover et al., Appl. Phys. Lett. 68, 714 (1996)
[15]P.Kuiper, B. G. Searle, L. C. Duda, R. M. Wolf, and P. J. van der
Zaag, J. Electron Spectrosc. Relat. Phenom. 86, 107 ~1997!.
[16]E.L. Paradis and A.J. Shuskus, Thin Solid Films, 38(1976), 131-141
[17]Yasuhiro Igasaki and Hiromi Saito, , Thin Solid Films, 199(1991), 223-230
[18]Takashi Komaru et al., , Jpn. J. Appl. Phys. Part 1
[19]M.T. Young and S.D. Keun, Thin Solid Films, 410(2002), 8-13
[20]T. Minami, , MRS Bulletin , August(2000), 38-41
[21]Takashi Komaru et al., Jpn. J. Appl. Phys. Part 1 ,
第二章
[1].Boon K. Teo, EXAFS：Basic Principle and Data Analysis, Springer-
Verlag, New York (1986)
[2]D.C.Koningsberger, and R. Prins, X-Ray Absorption：Principles,
[3]Application, Techniques of EXAFS, SEXAFS and XANES, John
Wiley, New York (1988)
[4]J.J.Rehr, C. H. Booth, F. Bridges, and S. I. Zabinsky, Phys. Rev. B
49, 12347 (1994)
[5]F.Bridges, C. H. Booth, and G. G. Li, Physical B 208&209, 121
(1995)
第四章
[1]D.M. Lind, S.D. Berry, G. Chern, H. Mathias, and L.R. Testardi, Phys.
Rev. B. 45, 1838 (1992).
[2]G.Q. Gong, A. Gupta, Gang Xiao et al., Phys. Rev. B. 56, 5096 (1998)
[3]Sangeeta Kale et al., Phys. Rev. B. 64, 205413-1 (2001)
[4]Susumu Soeya, Jun Hayakawa et al., Appl. Phys. Lett. 80, 823 (2002)
[5]Ken-ichi Aoshima and Shan X. Wang, J. Appl. Phys. 91, 7146 (2002)
[6]Iwwao Yamaguchi,Terayama Journal of Solid State Chemistry (2002)
[7]Sang Sub Kim , Jong Ha Moon , J. Appl. Phys 95, 454 (2004)
[8]唐敏注，“通訊用軟磁材料之特性及應用，”工業材料，105，pp.42-50