本研究利用高溫壓印法結合電化學蝕刻反應在p-type矽晶片上成長規則排列次微米直孔矽結構，藉不同形態的規則圖案、圖案尺寸、反應時間等實驗參數成長直孔結構，以SEM分析結構形態，並探討不同圖案下之成長行為。

　　結果顯示：以有機溶劑DMSO混合3莫耳濃度氫氟酸，在電流密度10 mA/cm2條件下進行p-type矽電化學蝕刻可得到平均孔徑約1 µm的直孔結構，孔洞呈不規則排列；線形圖案之矽基板進行電化學蝕刻時，可引導孔洞成長使其呈直線排列且尺寸有均勻化的趨勢，隨間距縮小至830 nm，尺寸限制效應消失。而以凹點型圖案進行電化學蝕刻，尺寸間距為1.6 µm的圖案，經120分鐘反應後，能得到深寬比值60的規則直孔結構；間距830 nm的圖案在反應15分鐘時能得到深寬比值10之規則圖案；隨著凹點尺寸縮小至550 nm，圖案可均勻引導初期反應微孔，形成深寬比值3之規則直孔。

　　最後將製備出的規則直孔結構應用於模板輔助用途，經電鍍製程在孔洞中沈積鎳金屬形成規則鎳柱排列，或在孔洞底部電鍍鎳，經CVD製程成長順向奈米碳管。

　　In this research, we combine the hot embossing process with the electrochemical etching technique to fabricate ordered array of macropores in p-type Si. The effect of experimental parameters on the growth characteristics of pores is evaluated.

　　It was found that only random macropores with average diameter of ~1µm could be formed after electrochemical etching in 3M HF/DMSO solution, while ordered pores array is obtained with the assistance of pre-patterning of the Si substrate surface. For micrometer-scale patterns (e.g. 1.6 µm), the regular porous structure with high aspect ratio of about 60 is successfully formed after 120 mins of electrochemical etching. However, as the pattern scale reduces to submicronmeter, the capability of pre-patterns in guiding the growth of pores becomes weakened. Regular pore arrays with aspect ratios of 10 and 3 were obtained by etching samples with pre-pattern pitches of 870 nm and 550 nm, respectively.

　　Finally, we use this regular structure as templates for Ni pillars array electroforming and CNTs growth by PECVD.

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