本實驗先利用磁控射頻濺鍍方式以不同功率(50W、100W、150W)濺鍍，在各別濺鍍功率之下固定總氣體流量75sccm，總壓力約為10mtorr，分別以不同氣體比例( =0、1、3、5)濺鍍氧化鋅至p-Si(100)基板成長氧化鋅薄膜，之後吾人對這些樣品做光激發螢光光譜(Photoluminescence ;PL)量測分析，得知N-H鍵結與 會對 與 的intensity造成影響，再從氧空缺缺陷發光部份確定氮可填補氧空缺，且在濺鍍功率50W時效果最好。
之後對樣品進行300、700、800、900、1000 真空退火，再以PL量測光譜，得到 與 的intensity變化與氮自樣品釋出、As over annealing有關，以及不同濺鍍功率與氣體比值 之樣品其氧空缺與真空退火溫度之關聯。

Photoluminescence (PL) spectra of zinc oxide films were investigated as a function of forming gas ratio (N2/Ar) and/or deposition power. The D0X and A0X PL peak shows blue shift as nitrogen introduced. The behavior of PL intensity ratio (D0X/A0X) for the sample deposited at lower power is different from that of higher power, which could be due to the competition between the N-H bond formation and the As substation. From the intensity ratio V0/A0X, we found the higher capacity for oxygen vacancy filled up with N is the sample grown at sputtering power 50W.
In addition, we had measured the PL spectra for the samples annealed at 300, 700, 800, 900 and 1000 in vacuum. The minimum of the PL intensity ratio A0X/V0 for annealing temperatures varied with the gas ratio. The number of oxygen vacancy is lower for the sample without N grown at sputtering power 50W and annealed at 700 . The number of oxygen vacancy increased as the deposition power and the nitrogen concentration increased.

[1] H. Kato, M. Sano, K. Miyanoto, and T. Yao,Homoepitaxial Growth of High-Quality Zn-Polar Zno Films by Plasma-Assisted Molecular Beam Expitaxy ,Jpn. J. Appl. Phys., Part 2, 42, L1002_2003_.
[2] Krupanidhi SB, Sayer M., Position and pressure effects in rf magnetron reactive sputter deposition of piezoelectric zinc oxide ,J Appl Phys 1984;56:3308.
[3] Minegishi K, Koiwai Y, Kikuchi Y, Yano K, Kasuga M, Shimizu A.,Growth of p-type Zinc Oxide Films by chemical Vapor Deposition ,Jpn J Appl Phys 1997;36:L1453.
[4] Segawa Y, Ohtomo A, Koinuma M, Tang ZK, Yu P, Wong GKL. Phys Stat Sol (b) 1997;202:669.
[5] Kang HB, Nakamara K, Lim SH, Shindo D.,Epitaxial Growth of ZnO Films on (0001) Sapphire at Low Temperatures by Electron Cyclotron Resonance-assisted Molecular Beam Expitaxy and Their Microstructural Characterizations, Jpn J Appl Phys. 1998;37:781.
[6] Ryu YR, Zhu S, Budai JD, Chandrasekhar HR, Miceli PF, White HW.Optical and structural properties of ZnO films deposited on GaAs by plused laser deposition, J. Appl. Phys Lett 2000;88:20.
[7] Jia-Min Shieh, Yi-Fan Lai, Yong-Chang Lin, and Jr-Yau Fang，Photoluminescence :Principles ,Structure ,and Applications, 奈米通訊第十二卷第二期
[8] M. Joseph, H. Tabata and T. Kawai, Jpn.,p-Type Electrical Conduction in Zno Thin Filmss by Ga and N Codoping, J. Appl. Phys. 38 (1999) p.L1205.
[9] H.B. Ye, J.F. Kong, W.Z. Shen, J.L. Zhao and X.M. Li,Origins of shallow level and hole mobility in codoped p-type ZnO thin films Appl. Phys. Lett. 90, 2007
[10] G. Yuan, Z. Ye, Q. Qian, L. Zhu, J. Huang and B. Zhao, P-type ZnO thin films fabricated by Al-N co-doping method at different substrate temperature ,J. Cryst. Growth 273 (2005)
[11] Z.Y. Xiao, Y.C. Liu, R. Mu, D.X. Zhao and J.Y. Zhang, Stability of p-type conductivity in nitrogen-doped ZnO thin film ,Appl. Phys. Lett. 92 (2008) p.052106.
[12] E. Przezdziecka, E. Kaminska, K.P. Korona, E. Dynowska, W. Dobrowolski, R. Jakiela, L. Klopotowski and J. Kossut, Semicond.,Photoluminescence Study and structural characterization of p-type ZnO dopped by N/andor As, Sci. Tech. 22 (2007) p.10.
[13] K.-K. Kim, H.-S. Kim, D.-K. Hwang, J.-H. Lim and S.-J. Park, Realization of p-type ZnO thin films via phosphorus dopping and thermal activation of the dopant,Appl. Phys. Lett. 83 (2003) p.63.
[14] F.X. Xiu, Z. Yang, L.J. Mandalapu, D.T. Zhao, J.L. Liu and W.P. Beyermann,High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy, Appl. Phys. Lett. 87 (2005) p.152101.
[15] J.G. Lu, Y.Z. Zhang, Z.Z. Ye, Y.J. Zeng, H.P. He, L.P. Zhu, J.Y. Huang, L. Wang, J. Yuan, B.H. Zhao and X.H. Li,Control of p-and n-type coductivities in Li-doped ZnO thin films, Appl. Phys. Lett. 89 (2006) p.112113.
[16] Y.R. Ryu, S. Zhu,1, D.C. Look, J.M. Wrobel, H.M. Jeong, H.W. White ,Synthesis of p-type ZnO films, Journal of Crystal Growth, Vol.216 , p.330-334 ,21 March 2000.
[17] Z. Y. Xue, D. H. Zang, Q. P. Wang, and J. H. Wang,The blue photoluminescence emitted from ZnO films deposited on glass substrate by rf magnetron sputtering, Appl. Surf. Sci. 195, 126 (2002).
[18] 謝正遠，以不同濺鍍功率與退火溫度成長氧化鋅及其螢光光譜研究，國立成功大學光電科學與工程研究所，2007
[19] 江景銘，不同氧壓力成長氧化鋅及其退火效應研究，國立成功大學光電科學與工程研究所，2010
[20] A. B. M. A. Ashrafi, N. T. Binh, B. P. Zhang, and Y. Segawa Temperature-dependent photoluminescence of ZnO layers grown on 6H-SiC substrates J.Appl. Phys. VOLUME 95, NUMBER 12,2002
[21] B. K. Meyer, 1, H. Alves1, D. M. Hofmann1, W. Kriegseis1, D. Forster2, F. Bertram2, J. Christen2, A. Hoffmann3, M. Straßburg3, M. Dworzak3, U. Haboeck3, and A. V. Rodina3, 4 Bound exciton and donor–acceptor pair recombinations in ZnO phys. stat. sol. (b) 241, No. 2, 231– 260 (2004)
[22] J. C. Fan,1 C. Y. Zhu,1 S. Fung,1 Y. C. Zhong,2 K. S. Wong,2 Z. Xie,3 G. Brauer,4 W. Anwand,4,5 W. Skorupa,4 C. K. To,1 B. Yang,1 C. D. Beling,1 and C. C. Ling1,Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering, J.Appl. Phys. 106, 073709 2009
[23] J. P. Zhang,a L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, and X. J. Wang Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures, J.Appl. Phys. 102, 114903 ,2007
[24] Peng Wang,a Nuofu Chen,b Zhigang Yin, Fei Yang, Changtao Peng, Ruixuan Dai, and Yiming Bai As-doped p-type ZnO films by sputtering and thermal diffusion process, J.Appl. Phys. 100, 043704,2006
[25] T. Krishnakumar a, R. Jayaprakash a, Nicola Pinna b, V.N. Singh c, B.R. Mehta c, A.R. Phani d, Microwave-assisted synthesis and characterization of flower shaped zinc oxide nanostructures, Materials Letters 63 (2009) 242–245
[26] Tae-Bong Hur, Gwang Soo Jeen, Yoon-Hwae Hwang, and Hyung-Kook Kim "Photoluminescence of polycrystalline ZnO under different annealing conditions" J.App. Phys.Vol.94,Issue9, p5787(2003)
[27] Jinzhong Wang a, Elangovan Elamurugu a, Vincent Sallet b, Franc﹐ois Jomard b,Alain Lusson b, Ana M. Botelho do Rego c, Pedro Barquinha a, Gonc﹐alo Gonc﹐alves a,Rodrigo Martins a, Elvira Fortunato a, Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering, Applied Surface Science 254 (2008) 7178–7182