本篇論文是利用變功率的光激發螢光實驗(Power-dependent photoluminescence, PDPL)研究不同溫度成長之InGaAs/GaAs量子井結構。在低功率激發下，成長溫度較高的樣品，PDPL譜線波尖(peak)位置並沒有位移，而成長溫度為450℃的樣品，由於雜質所導致微弱的電場造成能帶的傾斜，使得PDPL譜線波尖位置有產生微弱的紅位移。而在高激發功率下，各樣品的PDPL譜線波尖皆有紅位移現象，造成此能量位移的原因為Band-tailing effect。
由高激發功率之PDPL譜線波尖之能量變化，我們發現量子井寬度越寬時能量位移越小。此外，由各樣品PDPL光譜的強度積分與激發強度之關係可以推知載子的復合機制。最後，由高功率激發下PDPL GaAs譜線在高能量側之變化，可以得到不同激發功率下樣品所對應的電子溫度Te，進而找出GaAs的LO聲子能量。

The InGaAs/GaAs quantum wells (QWs) grown at different tempture are investigated by power-dependent photoluminescence(PDPL) in this study The peak position for the samples grown at higher temperature does not shift under the lower power excitation.While for the sample grown at 450℃，the peak position exhibits little red shift due to the decline of the energy band caused by the electric field which induced by the impurity.However，the peak position shows red shift for all samples because of the band-tailing effect under the high power excitations and the wider width of the QW the smaller shift of peak energy. In addition,we can find the mechanism of carrier recombination from the relation between the intergal intensity and excitation density.Finally，the electron temperature can be evaluated from the PDPL GaAs spectrum at high energy side and the GaAs LO phonon nergy can be found as 37meV.

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