本論文利用CMOS單光子崩潰二極體偵測器的優勢，可以製作出小體積、低成本、高效率及與外部電路整合成的一個晶片，在製程的選擇上利用台積電0.18 μm標準高壓製程(T18HVG2)所製作，透過元件設計技巧來調整junction位置以及表層Metal之設計，設計出光增強的形狀與主動區直徑來增加PDE，而最佳的參數為SPAD主動區直徑為6 μm。
基於Pt/β-Ga2O3作為薄膜應變規與溫度感測器，並配合上自身設計的應變平台來量測應變，並將金屬沉積於(1 0 0)面上，量測半導體電學性能，並取用動態電阻來觀測電阻變化，其室溫下應變係數達到-200，變溫量測中的溫度靈敏度為-2.83+-0.206mV/K。

This study takes advantages of the CMOS single-photon breakdown diode detector to produce a small size, low cost, high efficiency, and integrate it with external circuits into a single chip. TSMC's 0.18 μm standard high voltage process(T18HVG2) is used in the selection of the process. By adjusting the junction position and the design of the surface metal through component design techniques, the shape of the light enhancement and the diameter of active region is designed to increase the PDE. The best parameter is the 6 μm diameter of active region.
Based on Pt / β-Ga2O3 as a film strain gauge and temperature sensor, and with its own designed strain platform to measure strain, and the metal is deposited on the (1 0 0) surface, the electrical properties of the semiconductor are measured, and the dynamic resistance is used to observe the resistance change. The gauge factor reaches -200 at room temperature, and its temperature sensitivity is:-2.83+-0.206mV/K.

[1] Marezio, M. & Remeika, J. P. Bond Lengths in the α‐Ga2O3 Structure and the High‐Pressure Phase of Ga2−xFexO3. The Journal of Chemical Physics 46, 1862-1865 (1967).
[2] Ahman, J., Svensson, G. & Albertsson, J. A Reinvestigation of [beta]-Gallium Oxide. Acta Crystallographica Section C 52, 1336-1338 (1996).
[3] Pohl, K. Hydrothermale Bildung von γ-Ga2O3. Naturwissenschaften 55, 82-82 (1968).
[4] Yoshioka, S. et al. Structures and Energetics of Ga2O3 Polymorphs. Journal of Physics: Condensed Matter 19, 346211 (2007).
[5] Playford, H. Y., Hannon, A. C., Barney, E. R. & Walton, R. I. Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction. Chemistry – A European Journal 19, 2803-2813 (2013).
[6] Kumar, S., Pratiyush, A. S., Muralidharan, R., & Nath, D. N. A performance comparison between β-Ga2O3 and GaN High Electron Mobility Transistors. arXiv preprint arXiv:1802.02313. (2018).
[7] Nowak, R., Pessa, M., Suganuma, M., Leszczynski, M., Grzegory, I., Porowski, S., & Yoshida, F. Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal. Applied Physics Letters, 75(14), 2070-2072 (1999).
[8] 林于耀. 基於氧化鎵 (β-Ga2O3) 半導體之應變規與溫度感測器. 成功大學航空太空工程學系學位論文, 1-73. (2019).
[9] Huang, Y. H. 單光子崩潰二極體之元件尺寸與串音效應. 交通大學電子工程系所學位論文, (2016).
[10] Richardson, J.A. Time resolved single photon imaging in Nanometer Scale CMOS technology (Doctoral dissertation, University of Edinburgh). (2010).
[11] Durini, D., Paschen, U., Schwinger, A., & Spickermann, A. Silicon based single-photon avalanche diode (SPAD) technology for low-light and high-speed applications.In Photodetectors (pp.345-371). Woodhead Publishing. (2016).
[12] Zappa, F., Tisa, S., Tosi, A., & Cova, S. Principles and features of single-photon avalanche diode arrays. Sensors and Actuators A: Physical, 140(1), 103-112. (2007).
[13] Sze, S. M., & Ng, K. K. Physics of semiconductor devices. John wiley & sons. (2006).
[14] Fishburn, M. W. Fundamentals of CMOS single-photon avalanche diodes. fishburn. (2012).
[15] Rech, I., Ingargiola, A., Spinelli, R., Labanca, I., Marangoni, S., Ghioni, M., & Cova, S. Optical crosstalk in single photon avalanche diode arrays: a new complete model. Optics express, 16(12), 8381-8394. (2008).
[16] Palubiak, D. CMOS SINGLE PHOTON AVALANCHE DIODES AND TIME-TO-DIGITAL CONVERTERS FOR TIME-RESOLVED FLUORESCENCE ANALYSIS (Doctoral dissertation). (2016).
[17] Cova, S., Ghioni, M., Lotito, A. R. T. U. R. O., Rech, I., & Zappa, F. Evolution and prospects for single-photon avalanche diodes and quenching circuits. journal of modern optics, 51(9-10), 1267-1288. (2004).
[18] Plakhotnyuk, M. Nanostructured Heterojunction Crystalline Silicon Solar Cells with Transition Metal Oxide Carrier Selective Contacts. (2018).
[19] Wu, J. Y. 互補式金屬氧化物半導體製程單光子累崩光偵測器特性與其應用. 交通大學電子工程系所學位論文, 1-131. (2015).
[20] 許方則, et al. 標準 CMOS 製程之低暗記數單光子崩潰二極體. 交通大學電子工程系所學位論文. (2012).
[21] Wu, D. R., Tsai, C. M., Huang, Y. H., & Lin, S. D. Crosstalk between single-photon avalanche diodes in a 0.18-μm high-voltage CMOS process. Journal of Lightwave Technology, 36(3), 833-837. (2018).
[22] Okuto, Y., & Crowell, C. R. Threshold energy effect on avalanche breakdown voltage in semiconductor junctions. Solid-State Electronics, 18(2), 161-168. (1975).
[23] Hornsey, R. Design and fabrication of integrated image sensors. Institute for Computer Research, University of Waterloo, Waterloo, Canada, Short-course Notes. (1998).
[24] Schroder, D. K. Semiconductor material and device characterization. John Wiley & Sons. (2015).
[25] Yao, Y., Davis, R. F., & Porter, L. M. Investigation of different metals as ohmic contacts to β-Ga2O3: comparison and analysis of electrical behavior, morphology, and other physical properties. Journal of Electronic Materials, 46(4), 2053-2060. (2017).
[26] Eickhoff, M., & Stutzmann, M. Influence of crystal defects on the piezoresistive properties of 3C–SiC. Journal of applied physics, 96(5), 2878-2888. (2004).
[27] Higashiwaki, M. et al. Research and Development on Ga2O3 Transistors and Diodes. The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications. The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 100-103 (2013).
[28] Janis RESEARCH CO.,INC. ADDENDUM TO OPERATING INSTRUCTIONS FOR CCS-400H/204 SYSTEM, 20914.