本論文的研究包括奈米球微影術的製程改進，以及新的模板輔助奈米球微影術的製程開發。奈米球微影術利用奈米球自組裝成單層六方最密堆積的排列以為遮罩，在基板上做出有序的奈米金屬點陣列。經本實驗室幾年的發展已經可以在矽、玻璃等不同基板上排列面積30 mm × 15 mm 的單層奈米球層。但是此單層奈米球形成六方最密堆積的排列後並不如預期可以當作遮罩一直困擾我們。本研究經由掃描式電子顯微鏡的輔助，發現金屬在蒸鍍過奈米球層時被製程中所添加的界面活性劑阻擋，進一步研究發現經由加溫、氧電漿可以將界面活性劑移除，而可以成功在基板上製作出面積20μm × 20μm 的金屬點陣列。
本論文也進一步的研究模板輔助奈米球微影術製程，研究如何將此奈米金屬結構選擇性地製作在特定的物理溝槽結構之中。製程的開發首先利用黃光微影製作有高低差的溝槽圖樣，再將單層奈米球排入溝槽之中。我們就排列的過程中許多影響因素，如溝槽深度、奈米球溶液的濃度及奈米球自組裝儀器的可調變參數等進行系統性的研究，找出最適當的排列參數。再進一步對球體進行反應式離子蝕刻，將球體適度縮小後，再以此縮小後的奈米球為遮罩成功製作出有序的金屬洞陣列。
模板輔助奈米球微影術的開發，由於接下來反應式離子蝕刻機台的限制，製程開發因而受到延誤。因此需開發新的製程，以克服反應式離子蝕刻機台的限制，相信可以開發完成後可以應用在許多光電元件上，使其效率可以更有效地提升。

In this thesis, the improvement of nanosphere lithography (NSL) and the template-assisted nanosphere lithography were both reported. Nanosphere lithography utilizes one single layer of close-packed nanosphere arrays as a shadow mask to fabricate periodic nanostructure on top of different substrates and has been developed in our group for several years. Large area (30 mm × 15 mm) consists of one single layer of nanosphere arrays can be fabricated. However, we have difficulties to deposit metal through this single layer of nanosphere arrays. In this research, the residue of surfactant located between spheres was identified to be the origin of this problem with the help from scanning electron microscopy. By annealing in high temperature or treating with oxygen plasma, the residue can be effectively removed and large area (20μm × 20μm ) of metallic nanoparticles arrays can be fabricated.
Template-assisted nanosphere lithography was also developed in this research. Nanosphere arrays were fabricated inside the photolithography-fabricated patterns. The effects of various parameters were studied and optimized to fabricate a single layer of nanosphere arrays. The arrays were subsequently treated with reactive ion etching (RIE) to slightly reduced the size of the sphere. After depositing metal through the remaining nanosphere arrays, large area of periodic nano-hole arrays can be fabricated. However, the limitation of the RIE using a metallic hard mask has delayed further developments of the template-assisted nanosphere lithography. Therefore, modification of the process is required to avoid the metallic hard mask. We believe that template-assisted nanosphere lithography can be applied in several important optoelectronic devices and advanced their device performance.

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