本篇論文主要探討將奈米結構製作於氮化鎵發光二極體(LED)表面對光電特性的影響，被奈米結構所粗化的LED元件表面，可減少因為全反射而被侷限在元件內部的光，進而提升光萃取效率(LEE)。
　　實驗的部份將討論兩項變化因素，第一部份將製作不同尺寸的奈米結構，並與標準LED互相比較光電特性。使用直徑為500nm、700nm、750nm和1000nm材料為polystyrene (PS)的奈米小球，製作四種不同尺寸的奈米結構，在20mA電流注入下，使用500nm、700nm、750nm和1000nm 奈米小球製作的奈米結構，光輸出功率分別提升了34.39%、31.62%、41.62%和88.92%。
　　第二部份將改變奈米結構的分佈面積，製作選擇性區域和全區域兩種面積分佈。同樣的，此兩種結構將與標準LED互相比較，在20mA的電流注入下，標準LED、選擇性區域和全區域製作奈米結構LED的光輸出功率分別為3.34、4.74和4.42 mW。
　　因為磊晶成長的條件差異，會造成奈米結構的型貌有所不同，因此最後將藉由Trace Pro光學模擬軟體，模擬不同型貌對光輸出功率的影響。除此之外，亦將模擬實驗中所製作的各尺寸奈米結構，再次證明奈米結構能有效提升光輸出功率。

In this study, we produced nano structure on GaN-based LEDs to improve its optoelectronic characteristics. Roughened surface of LED was expected to reduce the light confined inside the device due to total reflection, with a corresponding increase in light extraction efficiency (LEE).
In this experiment, we discussed two different variables. One was the different scales of nano structure; comparing their optoelectronic characteristics with conventional LED. We used 500nm, 700nm, 750nm and 1000nms’ polystyrene (PS) sapphire to produce four different scales of nano structure on LED. Under 20-mA current injections the light output power of 500nm, 700nm, 750nm, and 1000nm enhanced about 34.39%, 31.62%, 41.62% and 88.92%.
The distribution area of nano structure was changed for the other variable. Nano structures distributed on selective regions and full regions. These two types of LED were analyzed optoelectronic characteristics too, comparing with conventional LED. The 20-mA of light output power of conventional LED, selective regions LED, and full region LED were 3.34, 4.74, and 4.42 mW.
Finally, the divergence of epitaxial conditions led to nano structures with different shapes. The effect of different shapes on light output power was analyzed by Trace Pro optical simulation software. In addition, we used simulation software to check our experiment, as a confirmation that nano structure can actually improve LEDs’ light output power.

第一章
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