在本文中，研究對於p-GaN、n-GaN簡易的光輔助化學濕式蝕刻並做了一系列的比較。和以往PEC蝕刻不同的是我們採用K2S2O8去取代傳統的白金電極。我們改變了KOH以及H3PO4的PH值對於n-GaN的蝕刻速率，並且在使用Xenon lamp的情形下，在不同光強度下，試試在PH數為多少時有最大的蝕刻速率，再來也嘗試著是否可以使用光輔助化學濕式蝕刻來蝕刻p-GaN。之後研究關於p-GaN的金屬接觸，並利用此光輔助化學蝕刻方式來做p-GaN金屬傳輸線量測（TLM）的平台(mesa)，在改變不同的狀況下，我做歐姆接觸的研究，嘗試得到最好的歐姆接觸條件，也就是比較小的比接觸阻抗。最後再研製蕭基二極體，並且研究它的電性，我也使用蝕刻的方法去改變表面載子濃度，去比較有蝕刻跟未蝕刻的電性差別。

　　In this dissertation, we study of a simple photo enhanced etching about p-GaN and n-GaN and do a series contrast. Instead of Pt electrode in past PEC etching, we used oxidizing agent K2S2O8. We used KOH and H3PO4 solutions varied different PH value to etch n-GaN. Under using Xenon lamp situation, I change the lamp intensity in order to get maximum etching in different PH value, and then we try to etch p-GaN and to see the possibility. After that, I study of the metal’s contact about p-GaN, and use PEC etching to make the mesa of metal contact on p-GaN. I change many conditions to get better ohmic contact and low characteristic contact resistance. At last, produce the schottky diode and study the electric property. And then I used PEC method to etch the p-GaN’s surface for getting the different change with unetching layer.

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