本論文的研究主要是藉由選擇性離子佈植的方式，改變佈植區材料表面的晶格常數，並搭配後續的氮化鎵選擇性再成長的方法來製做氮化鎵系列的紫外光光偵測器。選擇性矽離子佈植於n型氮化鎵模板(template)，經由離子轟擊表面會使得其晶格散亂，使後續高溫氮化鎵優先再成長於非佈植的區域，因此可形成一選擇性成長的現象。
　　傳統上，將氮化鎵材料成長在不導電的藍寶石基板上，因此在元件製作上需經過一道乾式蝕刻製程來定義出元件的主動區並有利於電極的製作；在本論文中，我們將選擇性離子佈植及選擇性再成長的技術應用於p-i-n紫外光光偵測器，如此一來可以節省一道乾式蝕刻的製程；我們分別量測順偏電流－電壓特性曲線(I-V curve)、暗電流(dark current)、照光光電流(photocurrent)及光響應值(responsivity)，並與傳統進行乾式蝕刻的製程之氮化鎵系列p-i-n紫外光光偵測器作比較。
　　在實驗結果方面，經由穿透式電子顯微鏡分析，在佈植區上方並無再成長的磊晶層，且經過電性以及光響應值等量測，發現利用此方法是可以製作出典型的p-i-n紫外光光偵測器，雖然在光響應值略小於傳統用乾式蝕刻製程的p-i-n紫外光光偵測器，但是都在可以比擬的範圍內。

In this study, selective-area ion implantation and selective-area regrowth techniques were applied to the fabrication of GaN-based p-i-n UV photodetectors. The selective-area growth could be attributed to the initial nucleation of GaN on the implantation-free regions rather than on the Si-implanted regions. That is, the GaN growth rate on the implanted regions was markedly lower than that on the implantation-free regions. The discrepancy in the growth rate could be attributed to fact that GaN epitaxial layer was difficult to grow on the lattice-damaged layer caused by the high-dose implantation. In general, the crystal structure of GaN layer subjected to high doses and/or energy levels of ion bombardment produces a lattice-disordered layer.
GaN-based p-i-n UV photodetectors are typically grown on sapphire substrate. The device fabrication needed a dry etching process to define the active region of device and expose underlying n+-GaN layer to contact metal for forming Ohmic contact. In this study, the self-assembled mesa due to selective-area regrowth on the Si-implanted GaN template could leave out the dry etching process, and the heavy Si-doping on the outside the mesa regions would be beneficial to the formation of n-electrode Ohmic contacts with low contact resistance. Compared with those of conventional GaN-based p-i-n UV photodetectors, which were fabricated using dry etching process to form active mesa regions, the preliminary results indicated that dark current and responsivity of the photodetectors with self-assembled mesa were comparable with the conventional devices.
In the following paragraphs, results about material characterizations and device performances are discussed in detail to clarify whether the formation of self-assembled mesa on selective-area Si-implanted GaN template is a practical technique or not.

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