石墨烯(graphene)常藉由化學氣相沈積法(chemical vapor deposition)來成功地於催化金屬上成長出品質佳且大面積的石墨烯，但常因轉印過程中造成石墨烯薄膜的缺陷與破損，影響到最後薄膜的品質，另為了使石墨烯有更進一步的應用， 如何有效地成長出所需圖形化的石墨烯便成了一個研究議題。在本論文中先以混合濺鍍的方式沉積鎳碳混合膜，並在薄膜上滴上匹配油，目的是為了在雷射加工過程中，阻隔空氣參與反應，再藉由超快雷射加工系統瞬間在微小區域內快速的升溫與降溫的加熱的特性，將鎳薄膜達到瞬間加熱的效果，讓鎳薄膜對碳原子的溶解度提高，使碳原子可以輕易地溶入鎳薄膜中，而當溫度持續上升時，鎳金屬便扮演著持續催化碳原子石墨化的角色，於基板上成長出石墨烯微結構。最後，利用化學濕式蝕刻(氯化鐵或其他蝕刻金屬化學溶液)的方式蝕刻掉鎳薄膜，在所需基板上留下成長後的石墨烯微圖形。而在實驗結果發現，當鎳碳混合膜的厚度為65 nm、採用雷射功率35 mW、掃描速率2.5 kHz，並且藉由系統控制二維的石墨烯微圖形中，雷射點與點間的距離約50 nm時，可最穩定於基板上成長出石墨烯微圖形，也於量測點上發現有明顯的石墨烯拉曼訊號。此外，我們也藉由原子力顯微鏡觀察石墨烯微圖形的表面形貌，發現使用匹配油並無法完全阻隔空氣參與加工過程，依舊有氧化鎳形成。最後則是採用於鎳碳混合膜上部分性地濺鍍二氧化矽薄膜，厚度大約為400 nm，不僅可於加工的過程中完全防止空氣參與反應，也可於最後的蝕刻過程中，與鎳薄膜一起被帶走，真正實現在一般環境下，直接於所需基板上成長出石墨烯微圖形。利用此加工方式可以省去傳統方法上許多繁雜的製程、嚴苛的環境以及光罩的設計與製作，並可望在未來運用於電路描繪與三維微電極的製作。

Graphene, often grow on catalytic metal successfully with good quality and large area by chemical vapor deposition. But the subsequent transfer process often cause the defects and damage, affecting the quality of graphene. In order to make graphene have a further application, how to effectively grow the required graphene patterns has become a research topic. In this thesis, we deposit Ni/C film by co-sputtering at first. In order to block air participating in the reaction during the laser processing, we dropped a layer of immersion oil on the Ni/C film. Owing to femtosecond laser pulse characteristics, it would lead to rapid heating and cooling in micro-areas. When the temperature rises, carbon atoms can easily diffuse into nickel. In the heating process, nickel acts like a catalytic role. Graphitization of carbon atoms to form graphene. Then, the remaining Ni/C film is removed by a wet chemical etching process, leaving the graphene micro-patterns on the substrate.
In the experiment, we find that the thickness of Ni/C film is around 65 nm, laser power is 35 mW, scan rate is 2.5 kHz and the points between each other is around 50 nm, we can grow graphene stably. We also find that there are obvious Raman signals at measuring points. In addition, we observe the surface morphology of graphene by atomic force microscopy, finding that using immersion oil cannot completely block the air participating in the process. Therefore, we deposit a layer of silicon dioxide on the surface of the Ni/C film partially, the thickness is around 400 nm. It can not only block the air participating in the process completely, but also be taken away in the wet chemical etching process. Therefore, this method can grow graphene micro-patterns on required substrate with no complicated process, design of masks and subsequent transfer process. So, this method is expected to be used in circuit description and three -dimensional microelectrode in the future.

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