在本論文中，我們以有機金屬化學氣相沉積法成長及研製砷化鋁鎵/砷化銦鎵/砷化鎵擬晶性高電子移動率電晶體與氮化鋁鎵/氮化鎵高電子移動率電晶體。由於許多研究指出高溫及高能量的物理真空鍍膜技術容易對基材表面造成熱破壞，使得費米能階幾乎釘在某一定值，這使傳統元件之蕭特基能障高度也相對較低，且無法隨著改變不同金屬功函數而有所變動。為了改善費米能階釘住效應對元件影響，於本論文中使用電泳沉積法沉積金屬閘極，以獲得良好的蕭特基接面。因為蕭特基接面的品質對元件特性之影響相當直接，蕭特基能障高度的增加，會使得空乏區增大，並提高夾止及崩潰特性。
為了比較電泳沉積法與傳統熱蒸鍍之元件特性，我們分別對兩種方法所製作的元件做材料分析及電性測試，包含表面粗糙度、金屬粒徑大小及直流與微波量測等。
儘管電泳沉積法之元件展現較佳的直流特性，但其元件特性易受溫度所影響，是電泳技術需改進之處。

In this thesis, AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) and AlGaN/GaN high electron mobility transistors (HEMTs), grown by metal organic chemical vapor deposition (MOCVD), are fabricated and investigated. Due to the thermal damage induced by high-energy and high-temperature physical vacuum deposition, the Fermi-level is almost pinned at constant value instead of different metal work function. This also results in a lower Schottky barrier height of the conventional devices. In order to eliminate Fermi-level pinning effect, the electrophoretic deposition (EPD) approach is employed to deposit metal gate to obtain well-behaved Schottky contact interface. Since the quality of Schottky contact interface directly affects the device performance, the increase of Schottky barrier height could enhance the depletion region and improve the pinch-off and breakdown characteristics.
In order to compare the characteristics of the studied devices with electrophoretic deposition (EPD) and thermal evaporation (TE), the electric characteristics and material analyses are demonstrated, including surface roughness analysis, grain size, and measurements of DC and microwave performance.
The EPD-based device exhibits better DC performance at wide temperature ambience. However, the stronger temperature-dependent characteristic and inferior microwave performance of EPD-based device are also found as compared with TE-based device.

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