近紫外光(Near ultra-violet，NUV)搭配螢光粉的方法是目前白光發光二極體(White-light LED，WLED)發展的主要課題之一，其中所使用的螢光粉中，又以紅色光譜區效率最待提升。本研究採溶膠-凝膠法合成MgSiO3：Eu3+紅色螢光粉體，檢討熱處理條件及摻雜物添加量對合成粉體之微結構以及於383 nm近紫外光的激發光源下發光特性之影響。
　　
　　研究結果顯示，於800℃煆燒2 h合成之MgSiO3:Eu3+ 12 mole%螢光粉體，以613 nm為發射波長時，其吸收或激發波長介於350 ~ 420 nm。以383 nm為激發光源時，此合成之螢光粉體，其發射強度是隨煆燒溫度、持溫時間、Eu3+摻雜濃度以及鈉離子添加量等的增加而增加，且於800℃煆燒4 h及6 mole%鈉離子添加量有相對較強之發射強度。合成之MgSiO3:Eu3+ 12 mole%螢光粉體，其相對發射強度會受研磨處理而降低；此強度劣化現象可再藉適當之熱處理而回復其部分之發射強度。

　The development of white-light LED in near-UV region with phosphors is one of the significant topics recently. However, the efficiency improvement at red interval is specially emphasized. In this study, synthesis of MgSiO3:Eu3+ phosphor via sol-gel method was investigated. Effects of calcination conditions, contents of Eu3+ and Na+ on microstructure and photoluminescence (PL) properties by 383 nm pumping source of synthesized phosphors were also discussed.
　　
　The results show the absorption or excitation wavelength of MgSiO3:Eu3+ 12 mole% phosphor is between 350 ~ 420 nm as the emission peak is at 613 nm. Relative emission intensity of MgSiO3: Eu3+ x mole% phosphors is increased with the increase of calcination temperature, holding time and the contents of Eu3+ and Na+ doped. The relative emission intensity of MgSiO3:Eu3+ 12 mole% phosphor decreases after grinding process, and the intensity can be recovered by post heat treatment at 800℃.
MgSiO3, red, phosphor, UV, luminescence, sol-gel method

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