本研究探討可應用於IMT-2020(5G)行動通訊標準中的LTE-U和FR1頻段之射頻元件與氮化鎵電晶體於功率放大器之優點。第一章介紹此篇論文的研究背景與IMT-2020(5G)通訊標準的現況。第二章以髮夾式結構設計微帶線帶通濾波器，頻段為5-6GHz，期望能運用在3GPP TS 36.104 Evolved Universal Terrestrial Radio Access (E-UTRA)；Base Station (BS) radio transmission and reception中的未授權頻譜(LTE-U)。第三章介紹功率放大器，利用0.3µm製程，π型結構，閘極寬為300µm的GaAs Pseudomorphic High Electron Mobility Transistoer (PHEMT) 電晶體，來設計2-8GHz功率放大器，其頻率範圍涵蓋3GPP TS 38.104 Technical Specification Group Radio Access Network (NR)；Base Station Station (BS) radio transmission and reception的FR1頻段。第四章介紹寬頻高功率放大器，利用HEMT GaN電晶體搭配巴倫推挽式放大電路結構來設計，期望放大器在20-520MHz頻段範圍裡能達到Psat =50dBm的飽和輸出功率與飽和增益Gp = 17dB以上。第五章為結論以及未來研究。

This research explores RF components for the LTE-U and FR1 bands, and the advantages of GaN transistors in the IMT-2020 (5G) system standard. The first chapter introduces the research background of this research and the current status of IMT-2020 (5G) communication standards. In second chapter, we design the microstrip line bandpass filter of hairpin structure, the frequency band for 5-6GHz, and expected to be used in Unlicensed spectrum (LTE-U) of 3GPP TS 36.104. The third chapter introduces the power amplifier which using the Pseudomorphic High Electron Mobility Transistoer (PHEMT) transistor with a 300μm gate width and a π type structure to design a 2-8GHz power amplifier. It covers the FR1 band of 3GPP TS 38.104 Technical Specification Group Radio Access Network (NR); Base Station (BS) radio transmission and reception. The fourth chapter introduces the broadband high power amplifier which using GaN HEMT with balun push-pull amplifier circuit structure. And we expect the amplifier can achieve Psat = 50dBm saturated output power and Gp = 17dB saturation gain in the bandwidth of 20-520MHz .The fifth chapter is for the conclusion and future research.

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