在本論文之第一部份，首先探討利用電漿輔助式化學氣相沈積法(PECVD)，藉由控制SiH4, NH3, N2O與N2等反應氣體之流量，於p型矽基板上沈積出一系列的氮氧化矽(SiON)薄膜。接著利用光學量測分析，探討出其薄膜於不同成長參數下，有效折射率及紅外線吸收頻譜對於反應氣體流量間的關係。此不同氮/氧比例之SiON薄膜，有效折射率的分佈範圍可從1.47至1.94。此外，在傅立葉轉換紅外光譜儀(FTIR)分析下，發現經由1000度C以上在氮氣環境中高溫回火，可有效降低SiON之氮-氫(N-H)鍵結對於紅外線波段的吸收。由SiON具有一大範圍之有效折射率變換及低損耗傳輸特性，是故可用其作為積體光學波導元件之基材。接著，以波束傳播法(BPM)數值模擬，在多模干涉波導(MMI)之元件架構下，成功地設計並製造出操作於632.8nm與1550nm信號波段之1x8及1x16光分波器。此外，藉由熱光效應與SiON具正值之熱光係數的特性下，利用BPM數值模擬，探討了改變部份多模波導區之有效折射率對光輸出的影響，並以此原理成功地製造出具22-dB衰減之1x3多模干涉波導衰減器，及具13-dB衰減的2x2串接式多模干涉波導光開關。

在論文的第二部份，利用場效電晶體的結構，基於載子注入之電漿色散效應，成功設計出脊狀波導式之矽光調變器。在定義此元件n型源極(Source)、汲極(Drain)與p型閘極(Gate)的半導體製程中，採用了簡易有效的旋佈式摻雜(SOD)技術，藉由展阻量測(SRP)發現在經由1000度C的氮氧氛圍下摻雜，其p型與n型之摻雜濃度及深度可平均達到2-4x10的20次方cm-3及1um左右，且SOD摻雜濃度及擴散深度與時間和溫度有著密切的關係。本脊狀波導矽光調變器，藉由設計出不同的調變區長寬進行量測，發現在寬波導與長調變區的結構下，具有較高的光訊號調變效率。此外，本波導調變器在施加小於5伏特的汲-源極電壓(VDS)操作下，不論有無額外施加閘極電流，均可達到~100 %的調變深度表現，且本元件的響應速度範圍可達350至550us

由於矽光檢測元件亦為本文之另一研究重心，因此在論文的最後，詳細地探討了利用陽極氧化的方式，在室溫環境下於矽(SiGe)薄膜表面形成鈍化披覆層，以改善並降低金半金(MSM)矽鍺光檢測器之暗電流。藉由適當地控制陽極氧化之電流密度與時間，經C-V量測發現可有效地降低矽鍺之介面態位密度。與未披覆氧化層之元件相比，在施加電流密度為0.1mA/cm2與30分鐘的陽極氧化製程條件下，元件的暗電流降低了7個數量級，此外在5伏偏壓下，光暗電流比最高可提升至2.7x10的7次方。

In the first part of the dissertation, a collection of SiON films with different chemical compositions (various O/N ratios) were deposited on p-type silicon substrates using plasma-enhanced chemical vapor deposition (PECVD) method. These films were then optically characterized to delineate the impacts of relevant film growth parameters to the corresponding refractive indices and infrared absorption spectra. The Fourier transform infrared (FTIR) spectra were gathered in order to verify that a significant reduction in the infrared absorption of the N–H bond could in fact be achieved with the thermal annealing process. The refractive indices of SiON films with different O/N ratios spanned from 1.47 to 1.94 were realized by judiciously adjusting the pertinent PECVD gas flow rates. Next, the integrated 1x8 and 1x16 multimode interference (MMI) power beam splitters operating at 632.8 nm and 1.55nm were designed and fabricated based on the numerical simulation using beam propagation method (BPM). Furthermore, based on the positive thermo-optic (TO) coefficient of SiON, the TO effect was employed to change the self-imaging light pattern as generated by the side-heated MMI region for purposes of optical steering and attenuation. Finally, the integrated 1x3 SiO2/SiON/SiO2 MMI optical waveguide attenuator with 22-dB attenuation and 2x2 cascaded MMI optical switch with 13-dB attenuation were then designed and successfully fabricated.

The second part of this dissertation reports the fabrication and experimental characterization of field-effect transistor-based silicon optical waveguide modulators. The entire modulation scheme is realized through the so-called carrier injection or plasma dispersion effect. The spin-on dopant (SOD) method was conducted at 1000C in a mixture of nitrogen/oxygen ambient to separately pattern the heavily doped source (n+), gate (p+), and drain (n+) regions. The corresponding p- and n-type dopant profiles were determined using the spreading resistance probe (SRP) technique, where the average dopant concentrations and diffusion depths of both the heavily doped p+ and n+ regions were in the neighborhood of 2 − 4x10E20 cm-3 and ~ 1um, respectively. The resultant dopant concentrations and diffusion depths were found to be critically dependent on the diffusion time and temperature. An enhancement in the modulation efficiency of modulators was realized when the corresponding rib waveguide width and modulation length became respectively wider and longer. Furthermore, the modulators thus fabricated showed ultra-sensitivity in drain-source voltage (VDS), where a static modulation depth of nearly 100 % at VDS of less than 5 V was achieved with and without the biasing gate current applied. Finally, the rise and fall times extracted from the dynamical transmitted intensity measurement were in a range spanning from 350 to 550 us.

In the last part of this dissertation, a detailed procedure of using the anodic oxidation method to passivate the SiGe film surface for the purpose of enhancing the functionality of SiGe/Si heterojunction infrared metal-semiconductor-metal (MSM) photodetectors was reported. Specifically, in order to reduce the magnitude of the dark current while simultaneously boosting the photocurrent to dark current contrast ratio, a proper adjustment of anodic oxidation time and current density is necessary. According to the C-V analysis, the interface state density can be reduced via the anodic oxidation method. Compared to uncapped samples, a reduction of approximately 7 orders of magnitude in dark current was achieved by using the anodic-oxide passivation at an applied current density of 0.1 mA/cm2 for 30 minutes. Furthermore, the photo to dark current contrast ratio of the oxide-passivated samples was enhanced by a magnitude of 2.7x10E7 under 5 V bias voltage.

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Chapter 3
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Chapter 4
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Chapter 5
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