本論文旨在進行通訊系統關鍵零組件Ｋ頻段射頻功率放大器之研製。我們將針對應用於衛星通訊系統之中功率放大器與降頻器之中頻放大器，提出電路設計與模擬分析研究。於功率放大器設計方面，係採用混成微波積體電路以及微帶線電路之架構，配合負載線理論尋找出最佳輸出阻抗，藉由阻抗匹配降低返回損耗以得最佳的輸出功率，其中將配合使用pHEMT及陶瓷基板製程製作成一單級的MIC，進而再組合成功率放大器模組。於中頻放大器方面，依據最低偏壓電流條件，同時兼顧低雜訊、高增益與高輸出功率，利用單石微波積體電路（MMIC）製程進行研製。
　　研製所得Ｋ頻段功率放大器其主要量測結果如下：於外加偏壓8V電流800mA下，操作頻段為21GHz至22.2GHz，頻寬為1.2GHz，小訊號增益達28dB，功率為28dBm，此外輸入返回損耗為低於-15dB。

　　This thesis presents the implementation and characterization of a K-band power amplifier in form of Hybrid MIC (Microwave Integrated Circuit) and an IF amplifier for satellite communication systems. The design, simulation, and measurement for the two amplifiers using pHEMTs and the aluminum substrate are reported. To offer maximum output power, the micro-strip line with load line method was employed to determine the optimize output resistance. The technology used for the IF amplifier to achieve low noise, high gain，and high power is proposed and discussed.
　　Both the power and IF amplifiers have been successfully implemented. The key specifications obtained form measurements ar as follows: For this K band power amplifier, under the DC bias voltage is 8V with 800mA of the DC bias current, the frequency start at 21GHz and stop at 22.2GHz, the band width is 1.2GHz, , the small signal gain is 28dB, the output power is 28dBm, and the return loss less than -15dB.

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