半導體技術發展至今，晶片的散熱問題越來越棘手，如何將半導體晶片所積聚的熱量迅速的傳導到外部是一個值得研究的課題，單晶鑽石具有卓越的電絕緣性、及熱傳導，是本應用的最佳材料，然而，單晶鑽石的製作條件極其嚴苛，不符合現代半導體製程之需求，因此只能以相對低溫低壓成長之多晶鑽石薄膜替代，但鑽石晶粒中的缺陷及雜質，會拉低薄膜的品質；再者，隨著多晶鑽石的晶界密度增加，晶界所造成的聲子散射現象越趨嚴重、晶界中所含有的石墨等導電碳量也隨之增加，使得薄膜的導電度上升、熱傳導變差；最後，製程氣體中含有大量的氫氣，因此鑽石薄膜表面被氫化，使得鑽石表面呈現負的電子親和力，發生電荷轉移參雜效應，讓原本不導電的鑽石薄膜變為P型半導體。
上述三點會使的鑽石薄膜的特性變差，本論文尋求最佳化之化學氣相沉積大面積多晶鑽石薄膜，以追求漏電流極小的高導熱鍍膜，所採用的策略是利用多層不同特性與目的之多晶鑽石薄膜，達成晶粒太小適中且晶體品質佳的三層鑽石薄膜結構，首先以奈米鑽石薄膜作為多晶鑽石薄膜的高密度晶種，再以奈米鑽石薄膜保護多晶鑽石鍍膜，所得三層結構之鑽石鍍膜除了具有良好的導熱能力之外，漏電流也極小。

For semiconductor technology, thermal issues are becoming more and more serious—and getting much more attention. Chips need coatings with both high thermal conductivity and high electrical insulation for isolating electronic devices and interconnects while spreading heat generated by stacked integrated circuits effectively. Single crystalline diamond possesses excellent electrical insulation and thermal conductivity, which is a perfect candidate. However, a low temperature and large-area coating of single crystalline diamond is difficult to achieve. So we use polycrystalline diamond films instead. But for polycrystalline diamond films with many grain boundaries, the severe phonon scattering and electrically conductive graphitic carbon contents in grain boundaries cause the electrical insulation and the thermal conductivity to decrease.
This thesis reports a large-area tri-layer Chemical vapor deposition (CVD) diamond structure to achieve sustainable 10e10 Ωcm electrical resistivity in the ambient atmosphere. A nanodiamond base layer provides a high-density diamond seeding layer for the polycrystalline diamond film to contain few voids and graphitic carbon in the grain boundaries. The second nanodiamond film is used to encapsulate the de-hydrogenated microcrystalline diamond film to prevent degradation of electrical resistance due to the ambient atmosphere.

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