本論文為對於錳摻雜於氮化鎵材料光電特性與元件應用之研究。對其光電特性的探討我們進行穿透光譜、霍爾效應之量測。而應用的元件包括：吸收層為氮化鎵摻雜錳的蕭基光偵測器、主動層為GaN:Mn/InGaN 多重量子井結構的太陽能電池、具有Up-Convertion 機制之轉換層的GaN/InGaN多重量子井結構太陽能電池。
由穿透率的量測結果可看出，錳摻雜於氮化鎵的材料會在禁止能帶間形成雜質能帶，所以此材料除了會吸收能量大於能隙的光，還會吸收能量大於雜質能帶與導(價)電帶能量差的光。將此特性應用於蕭基光偵測器上發現，與傳統氮化鎵材料的蕭基光偵測器相比，其光響應頻譜有明顯的二階式響應。
由於錳摻雜於氮化鎵材料的光偵測器具有二階響應的性質，進而設計了兩種結構的太陽能電池：第一種為GaN:Mn/InGaN 多重量子井結構的太陽能電池，預期能藉由雜質能帶的吸收而產生多餘的光電流；另一種結構為具有Up-Convertion 機制之光轉換層的GaN/InGaN多重量子井結構太陽能電池，預期能藉由此Up-Convertion 機制更有效利用太陽光頻譜產生多餘的光電流。在本論文中將會介紹此一具有Up-Convertion 機制之光轉換層之結構與工作原理，其實驗結果將在本文中作詳細的討論。

The optical and electrical properties of Mn-doped epitaxial GaN and the application of devices were studied. Transmittance spectrums indicate that a Mn-related impurity band was formed in the bandgap of GaN. According to the transmittance spectrums, Mn-doped GaN was applied to the absorption layer of schottky barrier detector. Compared with Mn-free GaN-based schottky barrier detector, the responsivity spectrum of Mn-doped GaN-based schottky barrier detector had different performance. The impurity band of Mn-doped GaN induced that Mn-doped GaN-based schottky barrier detector had two different wavelength region response. Therefore, Mn-doped GaN-based schottky barrier detector exhibits two-step-responsivity characteristics.
As a result of two-step-responsivity characteristics, we fabricated GaN:Mn/InGaN multiple-quantum-well solar cells. Expect that the impurity band of Mn-doped GaN could contribute more photocurrent by sunlight. Another structure that is a luminance up-converter was designed. According to the up-convertion mechanism, we applied the luminance up-converter to GaN/InGaN multiple-quantum-well solar cells which could absorb sunlight more effectively in theory. The experiment result and the theoretically mechanism were studied in this thesis.

第一章
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第四章
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