二維奈米材料，其厚度方向僅有一或幾個原子層厚度，性能特殊且優異，在許多領域皆有著可觀的應用潛能。隨著技術已能成功地控制剝離或合成出單個或數個原子層數之石墨烯，其獨特的電子、物理、化學性能很快得帶動了二維材料的研究。其中與石墨烯結構相似之hBN也因此吸引了不少注意力，因B原子與N原子造成之極性差異，使其導熱性好同時又不導電，作為可散熱之絕緣材料，也因其二維結構與化學穩定性，使其亦可作為好的材料保護層和防擴散層。
本論文使用石英雙套管型高溫爐管系統，以硼烷胺作為前驅物、銅箔為基板，採用化學氣相沉積法沉積氮化硼膜。先於氬氣和氫氣環境下高溫退火銅箔，取得晶向排列為Cu(111)之銅箔基板，接著以氬氣或氮氣作為載流氣體，在1000℃下進行化學沉積，並於薄膜沉積完後進行1050℃之高溫退火，提高薄膜結晶度，得出拉曼位移於1369cm-1之BN薄膜。

hBN, which has a similar structure to graphene, has attracted a lot of attention. The dif-ference of polarity between B and N atoms makes it thermally conductive and electrical insulated.
In this paper, a high-temperature quartz furnace system was used, with ammonia borane as the precursor and copper foil as the substrate, and synthesized by chemical vapor deposition. The copper foil is annealed at a high temperature in an argon and hydrogen environment to obtain a crystal orientation of Cu(111). Then, using argon or nitrogen as the carrier gas,synthesize the material at 1000°C. After CVD, high temperature annealing at 1050°C was carried out to improve the crystallinity of the film, and then a BN film with a Raman shift of 1369cm-1 was obtained. The synthesized film was presumably close to amorphous aBN or semi-crystalline tBN.

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