| 研究生: |
庄麗雲 Chong, Lai-Wan |
|---|---|
| 論文名稱: |
銀的表面修飾應用於上發光之高分子發光二極體 Surface Modification of Silver and Its Application to Top-Emitting Polymer Light-Emitting Diodes |
| 指導教授: |
溫添進
Wen, Ten-Chin 李玉郎 Lee, Yuh-Lang |
| 學位類別: |
博士 Doctor |
| 系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
| 論文出版年: | 2008 |
| 畢業學年度: | 96 |
| 語文別: | 英文 |
| 論文頁數: | 102 |
| 中文關鍵詞: | 硫醇 、上發光 、自我組裝單分子層 、有機高分子發光二極體 |
| 外文關鍵詞: | thio, self-assembled monolayers, polymer light-emitting diodes, top-emitting |
| 相關次數: | 點閱:77 下載:1 |
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本研究是利用自我組裝單分子層(SAM): 硫醇分子(4-FTP、TP)、P3HT及P3HT/FNAB,與有機溶劑 (THF)來修飾銀電極的表面以應用於上發光有機高分子發光二極體(T-PLEDs)。在利用二種不同官能基的硫醇分子(4-FTP及TP)來修飾銀的表面以作為T-PLEDs的陽極的研究中,發現經過硫醇修飾過的銀,其表面的反射率不但不會下降,反而上升。另外,經過4-FTP修飾過的元件,其正上方的發光強度可以達到68981 cd/m2,而且發光效率也達到10.3 cd/A,這是因為4-FTP在苯環的對位上出現了一個氟基,使4-FTP SAM能在銀與發光層之間的界面上產生一向銀內部的偶極矩,使電極的真空能階改變,繼而提升銀電極的功函數及元件的發光效率。而經過TP修飾過的電極,因為TP SAM在界面上形成遠離銀電極的偶極矩,故它會使銀的功函數減少而使元件效率變差。另外,利用照光的方法,把FNAB接在P3HT的自我組裝單分子層上以應用在T-PLEDs的研究中,發現利用照光的方法把FNAB接在P3HT上不但能有效地改變P3HT的特性,也可以提升上發光元作的效率。另外,結果發現,利用照光的方法也可以把FNAB接在其他含有甲基的分子上以改變該分子的特性。最後,在利用簡單的有機溶劑(THF)來修飾銀的表面以促進元件電洞注入的能力以及提升T-PLEDs的元件特性的研究中。透過XPS結果發現THF分子是以化學鍵的形式吸附在銀的表面,同時它會使銀表面上暴露更多氧的化合物,繼而提升元件電洞注入的能力,減少操作電壓及增加元件的發光效率。
In this thesis, self-assembled monolayers (SAM) including 4-flourothiophenol (4-FTP), thiophenol (TP), poly-(3-hexylthiophene-2,5-diyl) (P3HT), and 1-fluoro-2-nitro-4-azidobenzene modified (P3HT/FNAB), and an organic solvent, tetrahydrofuran (THF), are used to modify the silver (Ag) anode for top-emitting polymer light-emitting diodes (T-PLEDs). For the study of thiol-modified Ag anode (Ag/4-FTP and Ag/TP) for T-PLEDs, the results show that the reflectivity of Ag modified with 4-FTP SAM not only does not decrease, but also is slightly enhanced. A high brightness of 68981 cd/m2 in the forward direction of the substrate and an luminous efficiency (LE) of 10.3 cd/A are achieved for the 4-FTP device. The improved performance is attributed to the presence of fluorine atom on 4-FTP. The 4-FTP SAM can induce a dipole moment, which direction is downward to the Ag surface, at the interface between Ag and emitting layer. The dipole moment will shift the vacuum level, and thus increase the Ag work function and LE of the T-PLED. For TP-modified device, it induces an opposite dipole moment on the interface, so it will reduce the Ag work function and the performance of the T-PLED. For the modification of P3HT SAM by using photochemical reaction on Ag anode for T-PLEDs, the results show that the method not only can change the properties of P3HT, but also can enhance the T-PLED performance. On the other hand, this method can also be used to modify the compound with methyl group to change its characteristics. For the modification of Ag with THF solvent, the x-ray photoelectron spectroscope analysis shows that the THF molecules were chemically adsorbed on the Ag surface, forming oxygen-rich species by substrate-catalyzed decomposition. The THF-modification were found to enhance the hole injection on the Ag anode, decrease the threshold voltage, and increase the performance of devices.
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