我們利用奈米球蝕刻技術結合長期研究奈米級磁性薄膜製程的經驗，配合濺鍍系統的成長機制以及舉離（lift off）溶劑的調配，製作各種磁性奈米蝕刻圖樣，包含有奈米點陣列、奈米線、奈米環等奈米磁性結構，實驗中所使用之奈米球徑寬有500nm、1μm、10μm、50μm，用以作為分子束磊晶系統(MBE)成長垂直異向性Co/Pt多層膜之蝕刻遮罩，實驗中為了分析奈米球蝕刻因角度效應所造成材料偏向分布的現象，我們利用離子束濺鍍(IBS)系統改變濺鍍角度，並以AFM分析討論其結果，另外我們使用光電子激發顯微鏡(PEEM)在吸收光譜影像分析的優越性，來了解分子束磊晶系統角度效應的影響，並利用PEEM-XMCD效應，於影像上觀察鐵磁元素（Fe、Co、Ni）在連續膜及奈米陣列上的磁區分布。

　　In this article we are using nanosphere litho- -graphy. And depend our experience in epitaxy magnetic nano-thin film. By varying the ion beam　sputter sputter- -ing angle . And choice of the different solution in which the latex spheres is dissolved. We can make several kind of nano- -structure like nano-wire, nano-ring, and nano-dot. In order to make sure the shadow effect of nano- -sphere lithography we use x-ray photoelectron emission microscope (X-PEEM) to confirm different source form normal angle (Pt) and aside angle　(Co). How it deposit by Molecular Beam Epitaxy (MBE) with nanosphere lithography angle shadow effect. Using X-PEEM we can observe the magnetic domain for ferromagnetic film (Fe, Co, Ni) and compare with ferromagnetic pattern.

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