在此篇論文中，我們製作並探討使用不同絕緣層對氧化銦鎵鋅(IGZO)薄膜電晶體將會有何影響。實驗第一部分，將著重於電性分析，我們分別使用100奈米之五氧化二鉭(Ta2O5)與200奈米之二氧化矽(SiO2)做為無機材料之絕緣層製作氧化銦鎵鋅薄膜電晶體。兩顆元件之次臨界擺幅分別為0.12、0.75 V/dec。電子遷移率分別為102.07、12.54 cm2V-1s-1。電流開關比分別為1.45 × 106以及1.24 × 105。臨界電壓分別為0.6V以及 -0.7V。由於較低之漏電流以及較高之介電係數，以100奈米之五氧化二鉭做為絕緣層之薄膜電晶體擁有較好之元件特性。本研究論文亦有以旋轉塗佈之方法製作PVP材料有機絕緣層，做為氧化銦鎵鋅薄膜電晶體之絕緣層。我們選用PVP:PMF比例為10:1做為調配比例，於此比例下製作之絕緣層將擁有較平坦表面和較高的絕緣層電容值，因此擁有比較好之臨界擺幅。實驗結果顯示，於這三種不同之絕緣層下，以100奈米五氧化二鉭作為絕緣層之薄膜電晶體擁有最佳之元件特性。
第二部分的實驗中，將著重於元件之穩定性分析探討，因為若要將元件應用到實體產品，穩定性將是一大重點考量因素，經過穩定性分析後，實驗結果顯示亦為100奈米五氧化二鉭作為絕緣層之薄膜電晶體擁有最佳之穩定性，因此於本篇論文研究中，五氧化二鉭是最合適做為薄膜電晶體絕緣層之材料。下圖為使用於本論文中研究分析概略流程圖。

In this thesis, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with different kinds of dielectric layers were fabricated and discussed. In the first part of our experiments, we focused on the electrical characteristics analyzed. 100 nm Ta2O5 and 200 nm SiO2 thin films were used as inorganic dielectric layers for a-IGZO TFTs. The subthreshold swings (ss) of the devices were 0.12 and 0.75 V/dec, respectively. The carrier mobilities were 102.07, and 12.54 cm2V-1s-1. On/off current ratios were 1.45 × 106 and 1.24 × 105, respectively. The threshold voltages were 0.6V and -0.7V, respectively. Because of the lower leakage current and higher κ value, a-IGZO TFT with a 100 nm Ta2O5 dielectric layer had better performances. We also used the PVP organic material as the dielectric layer by spin-coated in this thesis, weight ratio of PVP and cross-linking agent, PMF 20:1 were used in this work. The TFT with PVP: PMF ratio 10:1 has better ss because in TFT with PVP: PMF ratio 10:1, the PVP layer has the best surface roughness and higher capacitance. The analytic results under these different dielectric materials, a-IGZO TFT with a 100 nm Ta2O5 dielectric layer had the best electrical characteristics.
In the second part of our experiment, we focused on the elements stability analyzed. If we want to use our experimental elements to practical products, stability is a critical issue that needed to concern. After our stability analysis, the result showed that a-IGZO TFT with a 100 nm Ta2O5 dielectric layer had the best stability. Therefore, Ta2O5¬ is the best suitable material for thin film transistors fabricated in our experiment research. A brief flow chart described our researching steps is shown in the following figure.

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