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研究生：	詹逸群 Chan, Yi-Chun
論文名稱：	具有表面微米球修飾結構之氮化鎵系發光二極體之研製 Fabrication of GaN-Based Light Emitting Diodes with Decorated Micro-sphere Surface Structures
指導教授：	劉文超 Liu, Wen-Chau
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 奈米積體電路工程碩士博士學位學程 MS Degree/Ph.D. Program on Nano-Integrated-Circuit Engineering
論文出版年：	2016
畢業學年度：	104
語文別：	英文
論文頁數：	93
中文關鍵詞：	氮化鎵、發光二極體、微奈米球、快速對流沉積、抗反射保護層、微米孔洞結構
外文關鍵詞：	GaN, light-emitting diodes, micro- and nano-spheres, rapid convection deposition, anti-reflection layer, microhole array structure
相關次數：	點閱：117 下載：2
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在本研究論文中，為了改善氮化鎵系發光二極體的光取出效率 (light extraction efficiency)，吾人研製一系列具有表面微米球修飾結構之高品質氮化鎵系發光二極體。分別提出了新穎的材料與元件製程技術，其中包含利用快速對流沉積法研製混合式二氧化矽微奈米球抗反射保護層、二氧化矽微米球填補於氧化鋁鋅導電層之抗反射保護層結構以及微米孔洞陣列之氮化鎵系發光二極體，有效提升氮化鎵系發光二極體的光電轉換效率，提升氮化鎵系發光二極體之性能。本論文對氮化鎵系發光二極體元件之光電特性，以及各種二氧化矽結構之製程方式皆有深入且詳細的研究與探討。
首先，吾人利用快速對流沉積法(Rapid Convection Deposition, RCD)之技術，製備出混合式二氧化矽微米球抗反射保護層結構之氮化鎵系發光二極體，混合式二氧化矽微米球結構可在不影響電性特性之下，改善元件表面粗糙度，同時形成漸層式折射率(graded refractive index)結構，有效降低內部全反射與增加光散射機會。光輸出功率(light output power)與光通量(luminous flux)分別提升18.7%以及28.4%，可有效改善光電轉換效率。
其次，由於氧化鋁鋅材料較氧化銦錫材料成本上低出許多，並具有相似之光性以及電性表現，後續章節皆選用氧化鋁鋅作為透明導電層之材料。藉由上述微米球塗佈技術，將二氧化矽微米球填補於規則性排列孔洞狀氧化鋁鋅透明導電層中，再利用濺鍍方式沉積二氧化矽保護層，增加微米球之附著力，形成具有以二氧化矽微米球填補於氧化鋁鋅導電層之抗反射保護層結構，減少Fresnel光吸收損失，有效改善光取出效率。雖然相較於傳統氮化鎵系發光二極體，此研發元件之順向導通電壓會略為增加，但此研發元件可提升光輸出功率與光通量達17.1%以及23.8%。
最後，探討經電桿式耦合電漿(Inductively Couple Plasma, ICP)蝕刻方式，於氮化鎵表面製備微米孔洞陣列結構，使得發光二極體之主動層(active region)暴露於空氣中，提升了發光二極體之表面區域，經由主動層發出光子在到達被蝕刻的微米孔洞側壁時，有更高機率散射至結構之外
。接著再沉積二氧化矽奈米粒子於元件表面及孔洞側壁，可改善元件表面及孔洞側壁之粗糙度，提升光輸出功率與外部量子效率高達64.8%以及75.0%。本研究論文中所研製的高品質氮化鎵系發光二極體，皆可有效提升光電轉換效率，在商業應用上相當具有潛力。

In this dissertation, for purposes of enhancing the light extraction efficiency (LEE), a series of GaN-Based light-emitting diodes (LEDs) with decorated micro-sphere surface structures are fabricated and studied. Novel materials and device fabrication processes, including fabrication of GaN-Based LEDs with hybrid SiO2 micro-spheres anti-reflection passivation layer by rapid convection deposition, GaN-Based LEDs with specific anti-reflection layer prepared by SiO2 micro-spheres filled in AZO current spreading layer, and GaN-Based LEDs with GaN-etched microhole arrays, are proposed to improve wall-plug efficiency (WPE). Thus, the enhanced performance of GaN-Based LEDs could be obtained. Optical and electrical properties of GaN-Based LEDs are studied and discussed. In addition, fabrication of various SiO2 anti-reflection structures are addressed and discussed in detail.
First, GaN-Based LEDs with hybrid SiO2 micro-spheres anti-reflection passivation layer fabricated by rapid convection deposition (RCD) is studied. Without any degradation of electrical properties, the use of SiO2 anti-reflection passivation layer could improve surface roughness and light scattering. The enhanced light extraction of GaN-Based LEDs could be attributed to graded-refractive-index structure. Thus, the total internal reflection (TIR) could be reduced. As compared with a conventional GaN-Based LED at 20 mA, the studied device exhibits a 18.7% and 28.4% enhancement in light output power and luminous ﬂux.
Second, it is found that aluminum-doped zinc oxide (AZO) has similar electrical conducting and optical transparent properties with indium titanium oxide (ITO). In addition, due to the higher cost of ITO material, AZO was used for being transparent conducting layer (TCL) instead of ITO in this study. The SiO2 micro-spheres were filled in AZO microhole arrays which is formed by rapid convection deposition. Then, SiO2 thin film was deposited on the surface by DC sputter. Due to the presence of SiO2 anti-reflection layer, photons emitted from the active region could be scattered and redirected in arbitrary directions for light extraction. Thus, Fresnel reflection could be reduced. As compared with a conventional GaN-Based LED at 20 mA, the studied device exhibits a 17.1% and 23.8% enhancement in light output power and luminous ﬂux.
Finally, effects of the use of microhole array structure on GaN-Based LEDs are systematically studied and demonstrated in this work. The microhole array structure could expose large active layer on sidewall area, resulting in reduced reflection of light in the microhole array structure. In addition, the use of SiO2 nano-particles deposited on the etched sidewall surface, which could increase opportunity for the light escaping from the inside of LEDs. As compared with a conventional LED at 20 mA, the studied device exhibits 64.8% and 75.0% improvements in light output power and external quantum efficiency.
All of these specific approaches, which are fabricated and studied in this dissertation, could improve performance of GaN-Based LEDs. To compete with traditional light sources in applications of solid-state lighting, high-performance GaN-Based LEDs could be expected to have some success.

Contents
Abstract
Figure Captions
Chapter 1.Introduction
1-1.History and Development of GaN-Based LEDs P.1
1-2.The Problem of GaN-Based LEDs P.2
1-3.Introduction of Micro-/ Nano-sphere Structures P.3
1-4.Thesis Organizations P.4
Chapter 2.Fabrication of GaN-Based LEDs with Hybrid SiO2 Micro-sphere Anti-reflection Passivation Layer by Rapid Convection Deposition 
2-1.Introduction P.5
2-1-1.Introduction P.5
2-1-2.Mechanisms of Anti-reflection P.6
2-1-3.Rapid Convection Deposition P.7
2-2.Fabrication Process of LED Devices P.8
2-2-1.LED Wafer Cleaning Process P.8
2-2-2.Device Structure and Fabrication P.9
2-3.Experimental Results and Discussion	P.10
2-3-1.Surface Morphology P.10
2-3-2.Transmittance P.11
2-3-3.Electrical Properties P.12
2-3-4.Optical Properties P.13
2-3-5.Junction Temperature and Wall-Plug Efficiency P.14
2-3-6.Light Emission Mapping P.15
2-4.Summary P.15
Chapter 3.Fabrication of GaN-Based LEDs with Specific Anti-reflection Layer Prepared by SiO2 Micro-spheres Filled in AZO Current Spreading Layer
3-1.Introduction P.17
3-2.Fabrication Process of LED Devices P.18
3-2-1.LED Wafer Cleaning Process P.18
3-2-2.Device Structure and Fabrication	P.18
3-3.Experimental Results and Discussion	P.19
3-3-1.Surface Morphology P.19
3-3-2.Electrical Properties P.20
3-3-3.Optical Properties P.21
3-3-4.Junction Temperature and Wall-Plug Efficiency P.23
3-3-5.Atom Force Microscope P.23
3-3-6.Light Emission Mapping P.24
3-4.Summary P.24
Chapter 4.Improved Performance of GaN-Based LED with GaN-etched Microhole Arrays
4-1.Introduction P.26
4-2.Fabrication Process of LED Devices P.26
4-2-1.LED Wafer Cleaning Process P.27
4-2-2.Device Structure and Fabrication P.27
4-3. Experimental Results and Discussion P.28
4-3-1.Surface Morphology P.28
4-3-2.Electrical Properties P.29
4-3-3.Optical Properties P.30
4-3-4.Junction Temperature and Wall-Plug Efficiency P.31
4-3-5.AFM and Microscope Images P.32
4-4.Summary P.33
Chapter 5.Conclusion and Prospect
5-1.Conclusion P.34
5-2.Prospect P.36
Reference P.38
Figures


                                    

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