本研究主要探討金屬－氧化物－金屬(M-I-M)結構之二極體元件，利用金屬及中低能隙氧化層材料之蕭特基界面(Schottky barrier)來產生雙向導通電流，此結構使用物理沉積製作，不需高溫製程且適用於三維記憶體之製程整合。本研究將進一步探討各種材料，如何提升導通及斷路狀態之電流比，低溫製程對元件品質的影響，及元件尺吋之縮小，且元件將在無塵室中製作以確保最佳品質。

In this research, the fabrication of metal-insulator-metal (M-I-M) diode is explored. With a Schottky barrier between metal and intermediate-energy-gap insulator layer material, turn on behavior is expected. Physical vapor deposition with low processing temperature is employed for the integration into the three-dimensional memory. We have further explored various material systems with focus on high on-off current ratio, compatibility with low temperature processing, and device scalability. Fabrication of the devices is performed in a clean room environment to minimize contamination.

第一章
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