近年來，具有高光電響應特性及轉換效率之三五族化合物半導體被廣泛地研究且被應用於太陽電池及偵檢器元件;因此，在本論文中，作者研究改善三五族化合物半導體鍺/砷化鎵/磷化銦鎵三接面太陽電池光電特性。因為三接面太陽電池因電流匹配之串疊結構，且可吸收300nm~1800nm太陽光譜，所以，在目前的各種太陽電池中效率最高。
氧化鋅的能隙的大小為3.37電子伏特，具有透光率高以及高溫穩定等特性，因此，廣泛被利用在各式太陽電池當作抗反射層廣泛被當作抗反射層。本論文根據等效介質理論計算與分析出優化後的奈米結構抗反射層型貌，再使用成本較低之水溶液法成長氧化鋅奈米線於三接面太陽電池上並進行各種光電特性探討。
除此之外，為了減少傳統金屬電極遮避，造成入射光損失，作者應用改良後的氧化鋅鋁透明導電膜做為全透明式電極，並結合優化設計後的氧化鋅奈米柱，提供太陽電池的光電效率。
最後，作者應用三接面太陽電池高開路電壓特性，直接偏壓在氧化鋅系列紫外光偵檢器，做為一個三接面太陽電池與氧化鋅偵檢器的整合型裝置。可以迅速得到紫外光光電響應，並可將太陽電池的光電流供給其他裝置使用。除此之外，氧化鋅奈米柱結構也被應用來增加偵檢器的光響應。

In recent years, Ge/GaAs/GaInP TJ solar has been extensively studied and used in solar cells and the detector element due to excellent conversion efficiency. TJ solar cell tandem structure has highest conversion efficiency in all kinds of solar cells due to the current matching design and broad band absorption in solar spectrum. Therefore, the authors provides several methods to improve the optical and electrical properties of TJ solar cells and applies it to a integrated device.
The energy gap of the zinc oxide (ZnO) is 3.37 eV and ZnO has high transmittance and high thermal stability. ZnO nanowires (NW) are extensively used as antireflection (AR) coating on the solar cells due to its textured surface. Morever, ZnO NW can be well designed as a continuous AR coating and be excellent at anti-reflection function, according effective medium theory.
Conventional metal electrode of the solar cell makes the shading loss of incident light. In the dissertation, the author uses AZO of good electrical conductivity and high penetration characteristics to replace metal electrode and combines NW structure to improve the efficiency of solar cells.
In addition, TJ solar cells have high open circuit voltage (Voc) and the author applies it to directly bias the detector and enhance the responses immediately. Hence, an integrated self-powered ZnO photodetector (PD) biased by TJ solar to detect the UV incident light was demonstrated.

Chapter 1
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Chapter 4
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[3] D. J. Aiken and H.Q. Hou, “Design and production of extremely radiation-Hard 26% InGaP/GaAs/Ge Triple-Junction Solar Cells” in: Proc. 28th IEEE PV Specialists Conf., pp. 1374-1377, 2000.
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Chapter 5
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