本研究以 Hummer 法製備氧化石墨烯(Graphene Oxide，GO)，利用雙
十二碳二甲基溴化銨(DDAB)與氧化石墨烯之間的作用力，將氧化石墨烯
固定在氣/液界面,製備GO/DDAB 混和Langmuir 單分子膜。藉由單分子層
的表面壓-分子佔據面積等溫曲線(π-A isotherm)來探討GO/DDAB 混和單
分子膜於氣/液介面的行為。之後，利用Langmuir- Blodgett(LB)沉積法將
單分子膜轉移至固體基板，再以電子顯微鏡和原子力顯微鏡來觀察
GO/DDAB 混合LB 薄膜的表面形態，並利用紫外光的照射還原含氧官能
基形成還原之氧化石墨烯(Reduce Graphene Oxide)薄膜，之後進行循環伏
安測定、電化學阻力分析，探討還原之氧化石墨烯LB 膜之聚集行為對於
薄膜電化學性質及對過氧化氫感測靈敏度的影響。
由實驗結果發現，藉由界面活性劑與碳材的比例的調整可以得到分散
良好的GO 單分子膜，增加石墨烯角面(edge plane)之暴露面積,因而能夠有
效提升薄膜的電化學性質。由感測結果也發現隨著碳材聚集程度改善，電
極的感測效能會提升，其靈敏度為0.269μA/cm2．M，電流變化斜率為
0.15μA/cm2．s。

In order to improve the dispersibility of graphene, we functionalize the
graphite with oxidize agent by Hummer’s method .Due to the strong
hydrophilic property of Graphene Oxide(GO), we add cationic
surfactant(DDAB) to stabilize Graphene oxide at air/water interface. We study
the behavior of GO/DDAB mixed monolayer on the air/water interface by
using the pressure-area (π-A) isotherm. Then we transfer the GO/DDAB mix
monolayer Langmuir-Blodgett film onto the substrate, and obeserve film
surface morphology by TEM and AFM. In order to regain the film conductivity,
we expose the GO/DDAB mix Langmuir-Blodgett film under UV light to form
Reduce Graphene Oxide(rGO), then we observe the electrochemical property
of LB film by cyclic Voltammetry , electrochemical impedance sepectroscopy,
we also fabricate hydrogen peroxide sensor to get the sensor sensibility.
According to experiment results, by controlling the ratio of GO and
DDAB, well-dispersed GO thin film is fabricated. The edge plane structure
will increase while the film dispersibility is improved, which may improve the
film electrochemical property and sensing result. The sensor exhibits the
highest current sensitivity (0.269μA/cm2.M) and the lowest the slope of current
change (0.15μA/cm2.s).

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