本實驗使用溶膠凝膠法製備鋯鈦酸鋇薄膜作為電阻式記憶體之絕緣層材料。在實驗中，藉由金屬鋁做為插入層，作為capping layer，幫助元件的載子傳輸，進一步將元件之Set/Reset電壓控制在3.5V之內，且將元件之阻值比由102提升至105以上，大幅降低了元件整體之消耗功率。除此之外，本次實驗所運用的柔性氧化銦錫/聚對苯二甲酸乙二醇酯（PET）基板，在500次可撓度測試後依然保持良好的雙極性開關行為。在均勻性方面，有鋁作為插入層的元件也表現不俗，而且在耐久度測試上，直流cycle達到了300次以上。
在實驗中對材料物理性質分析透徹，加以驗證電阻式記憶體元件特性和電阻轉換機制的表現，並且討論未加入金屬摻入層和加入金屬摻入層在鋯鈦酸鋇薄膜的物性和電性機制之差異。

In this work, a barium zirconate titanate thin film was prepared as the material for the resistive memory insulating layer using a sol-gel method. As a result of using aluminum as a capping layer to assist the carrier transport of the device, the set/reset voltage of the device was controlled within 3.5V, and the on/off ratio of the device was improved from 103 to 105. Furthermore, the power consumption of the device was greatly reduced. In addition, a flexible Indium Tin Oxide / Polyethylene Terephthalate (PET) substrate was used in this work, and the components still maintained complete bipolar switching behavior after 500 deflection tests. In terms of uniformity, the components with aluminum used as a capping layer also performed well. Simultaneously, the DC cycle was achieved more than 300 times in the durability tests.
The physical properties of the material were thoroughly analyzed to verify the performance of the resistive memory element and the resistance conversion mechanism, and the electrical differences between BZT with and without a capping layer were discussed.

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