此研究主要是以濺鍍(Sputtering)方式來成長鎵摻雜氧化鋅薄膜(Gallium doped Zinc Oxide，簡稱GZO)作為透明導電薄膜，而透明導電薄膜需同時具備高的穿透度以及低片電阻值，因此在本實驗中我們在濺鍍的製程中改變工作距離、濺鍍功率及濺鍍的時間，觀察GZO薄膜在穿透度以及其電性上的變化，藉此來優化此透明導電薄膜。優化後的GZO薄膜在可見光波段(約350~800 nm)有高達90%的穿透度，在紅外光波段(約800到1200 nm)能夠有80%以上的穿透度，而薄膜的片電阻約為35Ω/□。

接著我們利用此GZO透明導電薄膜應用於鈣鈦礦太陽能電池上作為透明的對電極，濺鍍的過程中原子轟擊能量太強破壞下方有機電洞傳輸材料Spiro-OMeTAD，因此我們以60和85 mm的工作距離，且調控濺鍍功率將GZO薄膜沉積於Spiro-OMeTAD上，並導入緩衝層三氧化鉬(Molybdenum(VI) oxide，MoO3)來保護Spiro-OMeTAD，使濺鍍GZO完整覆蓋於有機軟物質上。但是由於GZO薄膜在低溫的濺鍍製程下成長出來為多晶的形貌，因此成長於非晶的Spiro-OMeTAD上會造成附著性差而容易剝落，也會使元件的效率較低，因此在本實驗中優化後的雙面透光鈣鈦礦太陽能電池，其最高的光電轉換效率約為9.4%。另外我們也利用較高Tg點、及結晶性較好的高分子材料PTAA作為雙面透光元件之電洞傳輸層，如此可以使元件上之多晶的GZO薄膜結晶性更好，以增加其元件之穩定性。

The halide perovskite solar cells (PSCs) have potential for low-cost and high-efficiency photovoltaics; as a result, they have become promising candidates for the next-generation solar cells. Recently, since the thermal and light stability of PSCs are resolved gradually, the commercialization of PSCs can be expected. In this study, we use sputtering to deposit gallium doped zinc oxide (GZO) as a transparent conductive film, and optimize its transmittance and sheet resistance by adjusting working distance, sputtering power and sputtering time in the process. This GZO film shows high transmittance in the 400–1200 nm wavelength range with a sheet resistance of 35 Ω/sq. We demonstrate GZO-based semitransparent perovskite solar cells with over 9% power conversion efficiency by inserting a thin molybdenum oxide as buffer layer between the sputtered GZO and the organic hole transport layer (HTL) of Spiro-OMeTAD. We further replace Spiro-OMeTAD by PTAA which has a higher Tg point to withstand the bombardment during sputtering.

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