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研究生： 張毓航
Teoh, Aik-Hang
論文名稱： 利用微波加熱瀝青製備奈米碳化矽之研究
Fabrication of Nano Silicon Carbide Using Microwave Heating of Coal Tar Pitch
指導教授： 陳志勇
Chen, Chuh-Yung
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2020
畢業學年度： 108
語文別： 中文
論文頁數： 54
中文關鍵詞： 碳化矽 、微波加熱 、碳熱還原法 、線狀奈米碳化矽 、無電鍍鎳
外文關鍵詞： Silicon Carbide, Microwave Heating, Carbothermal Reaction, Silicon Carbide Nanowire, Electroless Plating of Nickel
相關次數： 點閱：107  下載：2 
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    • 碳化矽(SiC)為5G時代的重要半導體材料，本研究利用石油煉製的瀝青副產物與二氧化矽，透過微波高溫處理（溫度=1450℃），進行碳熱還原反應，進而長出奈米碳化矽。由SEM分析可觀察到產物為線狀奈米碳化矽和顆粒狀奈米碳化矽；藉由X 射線繞射儀分析可觀察到在 2θ 值為 35.7°、 60.0°、71.8°出現 β-SiC 結晶的特徵繞射峰；另藉由傅立葉轉換紅外線光譜儀 (FTIR)分析在797cm-1 位置有Si-C鍵結的特徵吸收峰， 顯示本研究已成功利用高效能的微波製備出奈米碳化矽材料。在比較利用微波和高溫爐高溫處理下的碳化矽產物方面，由XRD和FT-IR分析可觀察到利用微波高溫處理的產物中，碳化矽的結晶度比較高。此外，本研究改變微波製程處理溫度為1200℃、1300℃和1450℃，觀察其對生成SiC的影響。從SEM、XRD和FT-IR分析顯示，1200℃只能生成少量的碳化矽，產物中殘留未反應的碳和二氧化矽；而1450℃可以生成大量的奈米碳化矽。另外，改變瀝青：二氧化矽的比例為3：1、5：1和7：1的實驗結果顯示，隨著碳含量的增加，產物中殘留的二氧化矽越少，表示反應越完全。透過液相分離程序，獲得奈米線狀碳化矽。最後將奈米線狀碳化矽利用無電鍍鎳的方式長鎳，製備出高導熱係數的材料。

    Silicon carbide (SiC) is an important device material for the 5G communication era. In this study, coal tar pitch and fumed silica are used as raw materials to prepare the SiC through microwave heating. From the SEM observation, the type of SiC products consist of nanowires and nanoparticles. XRD results showed that the 2θ values present at 35.7°, 60.0°, and 71.8°, which are typical characteristic diffraction peaks of β-SiC crystals. In addition, the characteristic peak of SiC in FTIR is presented at 797cm-1 which is the characteristic absorption peak of Si-C bonding. The above results show that nano-silicon carbide material was successfully manufactured by using cheap raw materials and high-efficiency green energy. The crystallinity of SiC prepared by microwave heating is higher than conventional heating from XRD and FTIR measurements. From SEM, XRD and FT-IR results, the yield of SiC produced by microwave heating controlled at 1200°C is lower than 1450°C. Furthermore, this study also manipulates the ratio of pitch: silica = 3:1, 5:1, and 7:1 to manufacture SiC by microwave oven. The results show that as the carbon content increases, the less silica remaining in the product, the greater the conversion of carbon and higher yield of SiC. High purity of SiC nanowire can be obtained through the liquid phase separation process. By using electroless plating of nickel on silicon carbide nanowire, this study can obtain a high thermal conductivity product.

    摘要 I Extended Abstract II 誌謝 XVII 總目錄 XVIII 表目錄 XX 圖目錄 XXI 第一章 緒論 1 第二章 文獻回顧 2 2-1 碳化矽 2 2-1-1 碳化矽簡介 2 2-1-2 碳化矽的種類 2 2-1-3 碳化矽合成方法 5 2-1-4 碳化矽的合成法比較 10 2-1-5碳熱還原法 11 2-1-6 碳化矽之應用 14 2-1-7 奈米碳化矽晶須 17 2-2 微波 19 2-2-1 微波背景介紹 19 2-2-2 微波加熱 20 2-2-3 微波加熱和傳統加熱比較 24 第三章 實驗步驟 26 3-1實驗藥品 26 3-2 實驗設備及分析儀器 26 3-3 實驗步驟 26 3-3-1原料的製備 26 3-3-2 微波實驗 27 3-3-3高溫爐實驗 29 3-3-4液相分離程序 30 3-3-5無電電鍍鎳 31 3-3-6鍍鎳線狀奈米碳化矽/環氧樹脂導熱試片製作 31 第四章 結果與討論 32 4-1 SEM表面形態分析 32 4-2 XRD和IR分析 33 4-3 反應溫度的影響 35 4-4 瀝青：二氧化矽的影響 39 4-5 線狀和顆粒狀奈米碳化矽的分離 42 4-5-1 線狀和顆粒狀碳化矽的親水和疏水性質 42 4-5-2 比較前處理 物理作用力大小的差異 42 4-5-3 純化 47 4-6 成本估算 48 4-7無電電鍍鎳 49 第五章 結論 52 參考文獻 53

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