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研究生: 陳易靖
Chen, Yi-Jing
論文名稱: 以電荷動力實現快速且高靈敏度的FRET分子感測
Electrokinetic Microdevice for Rapid and Ultrasensitive Quantum Dot-Based FRET Molecular Sensing
指導教授: 魏憲鴻
Wei, Hsien-Hung
學位類別: 碩士
Master
系所名稱: 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年: 2017
畢業學年度: 105
語文別: 中文
論文頁數: 112
中文關鍵詞: 量子點交流電荷奈米捕捉技術螢光共振能量轉移DNA檢測
外文關鍵詞: Quantum Dot, Fluorescence Resonance Energy Transfer, AC Electrokinetics, DNA probing
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  • 近年來,螢光共振能量轉移的相關應用越來越受到重視,因其不僅能夠實現分子檢測,也能了解特定分子間的交互作用。然而實際應用時FRET訊號仍是相當微弱且須花很長的時間來檢測。又由於使用的螢光供體為奈米等級的量子點,這使得分子的操控上又更加困難了。本文我以交流電荷動力作用為基礎來開發具有實現快速增強FRET訊號功能的微流控平台,藉由交流電滲流(AC Electro-Osmosis, ACEO)微漩渦及介電泳的輔助來匯集QD並固定於電極上形成緊密的自組裝結構,接著再將目標單股DNA(single stranded DNA, ssDNA)集濃並捕捉到事先匯集好的QD來增益FRET檢測。結果顯示在一開電場的瞬間可以立即看到明顯FRET訊號的增強,表示QD及目標ssDNA的鍵結速率在ACEO的作用下可以在30秒之內迅速提升。此方法也相當靈敏,在不使用APD的情況之下,ssDNA濃度低至0.16 pM仍可以測得到。這樣的微流控平台可以針對目標或特定分子實現快速偵測及辨識,故對於設計生物晶片以進行有效生醫診斷的開發有很高的開發潛力。
    在本文的第四章,我先演示了以陣列式的60微米城垛式電極利用ACEO分開捕捉QDs及ssDNA並探討ACEO的捕捉機制,從中評估粒子的集濃倍率。結果發現到QDs在一開啟電場後就立即被捕捉到電極中心及邊緣,其中,邊緣區的結構較緊實,我認為是介電泳(dielectrophoresis, DEP)及電場誘導偶極( field induced dipole attraction, FIDA)的加成作用,使得粒子聚集的更緊密。同樣地,ssDNAs也能以同樣的方式捕捉到電極區,但電極邊緣的聚集並不明顯。從本章的結果來說,我成功地使用微米電極實現奈米粒子的捕捉。
    在本文的第五章,我開始進行FRET檢測,利用ACEO先集濃QDs,利用QDs集濃後會吸附在電極表面的特性,先將QD溶液洗掉後再加入ssDNA溶液來進行FRET。結果在一開啟電場後,立即可以測到快速且明顯的FRET訊號,而且,在目標ssDNA濃度為16 nM時,其FRET效率也與理論值10.6%接近。然而,我也發現到FRET訊號之中會參雜靜電吸附的假訊號,會干擾到實際的FRET訊號,這使得靈敏度無法繼續提升。
    在本文的第六章,我先調降了ssDNA探針的濃度,降低假訊號的干擾,另外,我也發現在城垛式電極的FRET訊號強弱會隨著區域不同而不同,訊號大小為:T字形區域>內部邊緣>中心區,而我認為T字形區的訊號最高的原因是其粒子的集濃效果最好,這是來自於不對稱電極造成的額外淨流動,DEP和FIDA皆在T字形區輔助ACEO的匯集,而且已聚集好的分子不會被帶走,使得T字形區的聚集結構更加穩定且不容易被破壞。於是我改用T字形區域來進行FRET。最後發現到隨著Target ssDNA濃度的降低,FRET訊號有下降的趨勢,且濃度可下探至0.16 pM。

    Fluorescence Resonance Energy Transfer (FRET) is a widely used technique for probing target molecules or specific molecular interactions. However, it might suffer weak FRET signals and long detection time. In this thesis I develop a new microfluidic FRET sensor to overcome the above shortcomings. The FRET sensing is made by probing target ssDNAs by quantum dots (QDs). I apply the joint effects of AC electro-osmosis (ACEO), dielectrophoresis (DEP) and field induced dipole attraction (FIDA) to trap nano-sized QDs and ssDNAs. I find that our sensor can not only amplify FRET signals after turning on fields, but also push the FRET detection limit to 0.16 picoM without using a highly sensitive photodetector like avalanche photodiode (APD). Therefore, it will have a great potential to capture and detect desired biomarkers in dilute solutions, opening up a new avenue for more efficient and accurate medical screening and molecular assays at chip scales.

    摘要 i 英文延伸摘要 iii 目錄 vii 圖目錄 x 表目錄 xvi 符號說明 xvii 第一章 緒論 1 1.1研究背景 1 1.2研究動機 1 第二章 基本原理 3 2.1 交流電滲流(AC Electro-osmosis, ACEO) 3 2.2 介電泳(Dielectrophoresis, DEP) 4 2.3 電場誘導偶極(Field Induced Dipole Attraction, FIDA) 5 2.4 螢光能量共振轉移(Fluorescence Resonance Energy Transfer, FRET) 5 第三章 文獻回顧 12 第四章 以交流電場實現奈米量子點的集濃及ssDNA分子的捕捉 21 4.1 QD605的集濃 21 4.1.1 實驗裝置組裝 21 4.1.2 工作溶液 22 4.1.3 實驗相關細節 22 4.1.4 實驗步驟 23 4.1.5 影像處理軟體(Image-Pro Plus)的影像擷取參數條件設定 24 4.2 ssDNA的捕捉 25 4.2.1實驗裝置組裝 25 4.2.2 工作溶液 26 4.2.3 實驗步驟 27 4.2.4 影像處理軟體(Image-Pro Plus)的影像擷取參數條件設定 28 4.3 實驗的現象與探討 29 4.3.1 QD605經AC電場的快速集濃 29 4.3.2 ssDNA經AC電場的快速捕捉 29 4.3.3 ACEO 的捕捉及集濃機制 29 4.4 結論 31 第五章 用FRET方法實現分子檢測 40 5.1 實驗 40 5.1.1 FRET的螢光濾片與供受體選擇 40 5.1.1 實驗裝置組裝 42 5.1.2 工作溶液 42 5.1.3 實驗步驟 44 5.1.4 實驗相關細節 46 5.1.4 影像處理軟體(Image-Pro Plus)的影像擷取參數條件設定 46 5.1.5 追蹤螢光強度對時間響應的量測方法 46 5.2 實驗的現象與探討 47 5.2.1以ACEO增益FRET分子感測 47 5.2.2 FRET訊號與Target ssDNA濃度的關係 48 5.2.3 FRET效率的計算與結果 49 5.2.4 Streptavidin-Biotin經由ACEO提升鍵結率的機制 50 5.3 結論 52 第六章 T字形電極區提升FRET檢測的靈敏度 72 6.1 實驗 72 6.1.1 FRET的螢光濾片與供受體選擇 72 6.1.1 實驗裝置組裝 73 6.1.2 工作溶液 74 6.1.3 實驗步驟 76 6.1.4 影像處理軟體(Image-Pro Plus)的影像擷取參數條件設定 77 6.1.5追蹤螢光強度對時間響應的量測方法 78 6.2 實驗的現象與探討 78 6.2.1 QD605與ssDNA在城垛式電極T字型區域的集濃與捕捉 78 6.2.2 於城垛式電極T字型區域的FRET訊號提升 79 6.2.3 FRET訊號與Target ssDNA濃度的關係 80 6.2.4 T字形區域的流動增益FRET訊號及其機制 81 6.2.5 FRET訊號隨電場開關的變化情形 81 6.3 結論 82 第七章 結論及未來工作 98 參考文獻 99 附錄A ITO電極製程 102 A.1電極光罩設計 102 A.2光微影製程 102 A.2.1 ITO晶片清洗 102 A.2.2光阻塗佈 103 A.2.3軟烤 103 A.2.4曝光 103 A.2.5 顯影 103 A.2.6 蝕刻 104 A.2.7 去光阻 104 附錄B PDMS裝置製作 107 B.1 光罩設計 107 B.2 光微影製程 107 B.2.1 基板清洗 107 B.2.2 光阻塗佈 108 B.2.3 軟烤 108 B.2.4 曝光 109 B.2.5 曝後烤 109 B.2.6 顯影 110 B.3 微流道模型製作 110

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